PVD target support members and methods of making

Abstract

A PVD target support member includes an alloy containing at least 90 wt % of a first metal and also containing a second metal and a third metal. The second metal increases electrical resistivity compared to an otherwise identical alloy lacking the second metal. The third metal increase tensile and/or yield strength compared to an otherwise identical alloy lacking the third metal. The alloy may exhibit a thermal stability during diffusion bonding to a target that meets or exceeds thermal stabilities of the otherwise identical alloy lacking the second metal and the otherwise identical alloy lacking the third metal. Another PVD target support member includes an alloy containing at least 90 wt % copper and also containing titanium and silver. The support member may be a backing plate.

1 . A PVD target support member comprising: 
 an alloy containing at least 90 wt % of a first metal and also containing a second metal and a third metal;    the second metal increasing electrical resistivity compared to an otherwise identical alloy lacking the second metal; and    the third metal increasing tensile and/or yield strength compared to an otherwise identical alloy lacking the third metal.    
   
   
       2 . The device of  claim 1  wherein the alloy of the first, second, and third metals exhibits a thermal stability during diffusion bonding to a target, the thermal stability meeting or exceeding thermal stabilities of the otherwise identical alloy lacking the second metal and the otherwise identical alloy lacking the third metal.  
   
   
       3 . The device of  claim 1  wherein the first metal consists of copper.  
   
   
       4 . The device of  claim 1  wherein the second metal consists of titanium.  
   
   
       5 . The device of  claim 1  wherein the third metal consists of silver.  
   
   
       6 . The device of  claim 1  wherein the alloy consists of the first metal, the second metal, and the third metal.  
   
   
       7 . The device of  claim 1  wherein the alloy contains at least 98.5 wt % of the first metal.  
   
   
       8 . The device of  claim 1  wherein the alloy contains no more than 1.5 wt % of the second metal and no more than 1.0 wt % of the third metal.  
   
   
       9 . The device of  claim 8  wherein the alloy contains no more than 0.3 wt % of the second metal and no more than 0.2 wt % of the third metal.  
   
   
       10 . The device of  claim 1  wherein the support member comprises a backing plate.  
   
   
       11 . A PVD target support member comprising an alloy containing at least 90 wt % copper and also containing titanium and silver.  
   
   
       12 . The device of  claim 11  wherein the alloy consists of copper, titanium, and silver.  
   
   
       13 . The device of  claim 11  wherein the alloy contains at least 98.5 wt % copper.  
   
   
       14 . The device of  claim 11  wherein the alloy contains no more than 1.5 wt % titanium and no more than 1.0 wt % silver.  
   
   
       15 . The device of  claim 13  wherein the titanium increases electrical resistivity compared to an otherwise identical alloy lacking the titanium.  
   
   
       16 . The device of  claim 13  wherein the silver increases tensile and/or yield strength compared to an otherwise identical alloy lacking the silver.  
   
   
       17 . The device of  claim 13  wherein the alloy exhibits a thermal stability during diffusion bonding to a target, the thermal stability meeting or exceeding thermal stabilities of an otherwise identical alloy lacking titanium and an otherwise identical alloy lacking the silver.  
   
   
       18 . The device of  claim 11  wherein the support member comprises a backing plate.  
   
   
       19 . A PVD target support member comprising a target mounting surface configured to receive and to contact a target, the mounting surface including an alloy containing at least 98.5 wt % copper and also containing titanium and silver.  
   
   
       20 . The device of  claim 19  wherein the alloy consists of copper, titanium, and silver.  
   
   
       21 . The device of  claim 19  wherein the mounting surface consists of the alloy.  
   
   
       22 . The device of  claim 19  wherein the alloy contains no more than 1.5 wt % titanium and no more than 1.0 wt % silver.  
   
   
       23 . The device of  claim 21  wherein the titanium increases electrical resistivity compared to an otherwise identical alloy lacking the titanium.  
   
   
       24 . The device of  claim 21  wherein the silver increases tensile and/or yield strength compared to an otherwise identical alloy lacking the silver.  
   
   
       25 . The device of  claim 21  wherein the alloy exhibits a thermal stability during diffusion bonding to a target, the thermal stability meeting or exceeding thermal stabilities of an otherwise identical alloy lacking titanium and an otherwise identical alloy lacking the silver.  
   
   
       26 . The device of  claim 19  wherein the support member comprises a backing plate.  
   
   
       27 . The device of  claim 19  wherein the support member is diffusion bonded at the mounting surface with a target.  
   
   
       28 . The device of  claim 27  wherein the target comprises a refractory metal.  
   
   
       29 . A method of making a PVD target support member comprising: 
 selecting a first metal to form at least 90 wt % of an alloy also containing a second metal and a third metal;    selecting the second metal to increase resistivity compared to an otherwise identical alloy lacking the second metal;    selecting the third metal to increase tensile and/or yield strength compared to an otherwise identical alloy lacking the third metal; and    forming a PVD target support member including the alloy of the first, second, and third metals.    
   
   
       30 . The method of  claim 29  wherein the alloy exhibits a thermal stability during diffusion bonding to a target, the thermal stability meeting or exceeding thermal stabilities of the otherwise identical alloy lacking the second metal and the otherwise identical alloy lacking the third metal.  
   
   
       31 . The method of  claim 29  wherein the third metal does not significantly affect resistivity.  
   
   
       32 . The method of  claim 29  wherein the second metal further increases tensile and/or yield strength in comparison to an otherwise identical alloy lacking the second metal.  
   
   
       33 . The method of  claim 29  wherein the first metal consists of copper.  
   
   
       34 . The method of  claim 29  wherein the second metal consists of titanium.  
   
   
       35 . The method of  claim 29  wherein the third metal consists of silver.  
   
   
       36 . The method of  claim 29  wherein the alloy consists of the first metal, the second metal, and the third metal.  
   
   
       37 . The method of  claim 29  wherein the alloy contains at least 98.5 wt % of the first metal.  
   
   
       38 . The method of  claim 29  wherein the alloy contains no more than 1.5 wt % of the second metal and no more than 1.0 wt % of the third metal.  
   
   
       39 . The method of  claim 38  wherein the alloy contains no more than 0.3 wt % of the second metal and no more than 0.2 wt % of the third metal.  
   
   
       40 . The method of  claim 29  wherein the support member comprises a backing plate.