Exposure method

Abstract

An exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein the following conditions are met A=−1.7k 1 +C1, 1.2≦C1≦1.3, 0.5≦B≦0.55 and B≦A−0.1, 0.80≦σ≦0.9 and σ≧A+ 0.1 , k 1 =(L/λ) NA, where k 1 is resolving power, L is a hole diameter of the contact-hole pattern, λ is a wavelength for exposure, NA is a numerical aperture of the projection optical system, σ is a ratio of a numerical aperture of an illumination optical system to the numerical aperture of the projection optical system, A and B are distances from two orthogonal axes to a boarder of a light-shielding part in an effective light source for illumination of plural kinds of light, the light-shielding part being symmetrical with respect to the two orthogonal axes.

1 . An exposure method comprising the steps of: 
 providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern; and    illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,    wherein 0.7≦d/t≦0.80 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.    
   
   
       2 . An exposure method according to  claim 1 , wherein 0.85L≦t≦1.15L is met where L is a hole diameter of the contact-hole pattern.  
   
   
       3 . An exposure method comprising the steps of: 
 providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern; and    illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,    wherein 0.75≦d/t≦0.90 is met where d is a size of an opening in the smaller pattern, and smaller than 0.45 when converted into resolving power k 1 , and t is a size of an opening in the contact-hole pattern.    
   
   
       4 . An exposure method according to  claim 3 , wherein 0.85L≦t≦1.15L is met where L is a hole diameter of the contact-hole pattern.  
   
   
       5 . An exposure method comprising the steps of: 
 providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern; and    illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,    0.85L≦t≦1.15L is met where L is a hole diameter of the contact-hole pattern.    
   
   
       6 . A device manufacturing method comprising the steps of: 
 exposing a pattern formed on a reticle onto an object by using an exposure method; and    performing a predetermined process for the exposed object,    wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein 0.7≦d/t≦0.80 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.    
   
   
       7 . A device manufacturing method comprising the steps of: 
 exposing a pattern formed on a reticle onto an object by using an exposure method; and    performing a predetermined process for the exposed object,    wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein 0.75≦d/t≦0.90 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.