Supercritical fluid technology for cleaning processing chambers and systems

Abstract

The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The invention also includes a method of removing deposited material from internal surfaces of a processing system. A cleaning agent comprising carbon dioxide is provided in liquid phase or supercritical phase into at least a portion of the processing system. A material deposited on an internal surface of the processing system is contacted with the cleaning agent to solubilize at least a portion of the deposited material and the solubilized fraction is removed from the system. The invention further includes a processing system which includes a supercritical fluid source in selective fluid communication with a processing chamber configured to selectively flow supercritical fluid into the chamber during a chamber cleaning process.

1 - 23 . (canceled)  
   
   
       24 . A processing system comprising: 
 a reactor having a processing chamber;    a supercritical fluid source in selective fluid communication with the processing chamber and configured for selectively flowing supercritical fluid during a chamber-cleaning process; and    a recovery vessel in fluid communication with the processing chamber.    
   
   
       25 . The processing system of  claim 24  further comprising a cold-trap, wherein the system is configured to selectively flow supercritical fluid into the cold trap.  
   
   
       26 . The system of  claim 25  wherein the cold trap is disposed in fluid receiving relation relative to the processing chamber and in fluid providing relation relative to the recovery vessel.  
   
   
       27 . The system of  claim 24  wherein the recovery vessel is in fluid communication with the supercritical fluid source for recycling of the supercritical fluid.  
   
   
       28 . The system of  claim 24  wherein at least some of any solutes present in the supercritical fluid are removed in the recovery vessel.  
   
   
       29 . The system of  claim 24  wherein the processing chamber is a deposition chamber.  
   
   
       30 . The system of  claim 29  further comprising at least one line in fluid communication with the deposition chamber, the at least one line being utilized during deposition processes and being selected from a feed line and an exhaust line, wherein the supercritical fluid passes through at least a portion of the at least one line during the chamber-cleaning process.  
   
   
       31 . The system of  claim 24  further comprising a co-solvent source.  
   
   
       32 . The system of  claim 31  wherein a co-solvent is introduced into the deposition chamber form the co-solvent source subsequent to initiating flow of supercritical fluid into the processing chamber.  
   
   
       33 . The system of  claim 31  wherein a co-solvent is dispersed within the supercritical fluid prior to initiating flow of the supercritical fluid into the processing chamber.  
   
   
       34 . The system of  claim 31  wherein a co-solvent is introduced into the processing chamber prior to initiating flow of the supercritical fluid into the processing chamber.  
   
   
       35 . The system of  claim 24  wherein the system is a semiconductor processing system.  
   
   
       36 . The system of  claim 24  wherein the chamber is selected from a PVD chamber, a CVD chamber, an ALD chamber, a pulsed CVD chamber, a furnace chamber and a PECVD chamber.