RF passive circuit and RF amplifier with via-holes

Abstract

An input matching parallel inductor 114 which utilizes a spiral inductor, and an input matching parallel capacitor 115 which utilizes an MIM capacitor, both being constituting elements of an input matching circuit portion 125 , form an input matching parallel capacitor 115 inside an input matching circuit via-hole 121 being formed by applying a method of surface via-hole to the front surface of a GaAs substrate 124 . A choke inductor 119 which utilizes a spiral inductor, and a bypass capacitor 120 which utilizes an MIM capacitor, both being constituting elements of a drain voltage feeding circuit 107 , form a bypass capacitor 120 inside a drain voltage feeding circuit via-hole 123 formed by applying a method of surface via-hole to the front surface of the GaAs substrate 124 . A drain voltage terminal 136 is extended by a drawing wire 135 from between the spiral inductor and the drain voltage feeding circuit via-hole 123.

1 . An RF passive circuit comprising: 
 a semiconductor substrate;    a spiral inductor which is formed on a main surface of the semiconductor substrate;    a via-hole which is formed at a position adjacent to the spiral inductor by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a dielectric layer which is formed on the metal film; and    a wiring metal layer which is formed on the dielectric layer and holds a capacitor between the via-hole;    wherein one end of the spiral inductor extends to be connected with the wiring metal layer.    
   
   
       2 . The RF passive circuit of  claim 1 , 
 wherein the spiral inductor has a double layer structure having an upper wiring metal layer and a lower wiring metal layer, where at least one of the wiring metal layers is in a spiral pattern, and where the wiring metal layers are connected to each other, with a contact hole therebetween.    
   
   
       3 . An RF choke used in at least one of a matching circuit and a bias feeding circuit, both circuits being included in an RF amplifier, the RF choke comprising: 
 a semiconductor substrate where at least one of the matching circuit and the bias feeding is circuit incorporated;    a spiral inductor which is formed on a main surface of the semiconductor substrate;    a via-hole which is formed at a position adjacent to the spiral inductor by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a dielectric layer which is formed on the metal film; and    a wiring metal layer which is formed on the dielectric layer and holds a capacitor between the via-hole,    wherein one end of the spiral inductor extends to be connected with the wiring metal layer.    
   
   
       4 .- 6 . (canceled)  
   
   
       7 . An RF passive circuit comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a wiring metal layer which is formed on a main surface of the semiconductor substrate and is electrically connected to the via-hole; and    an inductor which is made of a metal film in a spiral pattern and is formed on the first wiring metal layer with a dielectric layer therebetween.    
   
   
       8 . The RF passive circuit of  claim 7 , 
 wherein the wiring metal layer is in the same parallel pattern as the inductor.    
   
   
       9 . An RF choke used in at least one of a matching circuit and a bias feeding circuit, both circuits being included in an RF amplifier, the RF choke comprising: 
 a semiconductor substrate where at least one of the matching circuit and the bias feeding circuit is incorporated;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a wiring metal layer which is formed on a main surface of the semiconductor substrate and is electrically connected to the via-hole; and    an inductor which is made of a metal film in a spiral pattern and is formed on the first wiring metal layer with a dielectric layer therebetween.    
   
   
       10 .- 11 . (canceled)  
   
   
       12 . An RF passive circuit comprising: 
 a semiconductor substrate;    a dielectric layer which is formed on a first main surface of the semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through a second main surface of the semiconductor substrate until the hole reaches the dielectric layer; and    a metal layer formed on the dielectric layer which holds a static capacity between the metal film of the via-hole and the metal layer.    
   
   
       13 . The RF passive circuit of  claim 12 , further comprising: 
 a resistance element whose one terminal is electrically connected to the metal layer, and the other terminal to the via-hole.    
   
   
       14 . An RF amplifier comprising: 
 a semiconductor substrate;    a dielectric layer which is formed on a first main surface of the semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through a second main surface of the semiconductor substrate until the hole reaches the dielectric layer;    a metal layer formed on the dielectric layer which holds a static capacity between the metal film of the via-hole and the metal layer; and    a field effective transistor, mounted on the semiconductor substrate, which has a common gate circuit having a gate terminal electrically connected to the metal layer.    
   
   
       15 . An RF amplifier comprising: 
 a semiconductor substrate;    a dielectric layer which is formed on a first main surface of the semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through a second main surface of the semiconductor substrate until the hole reaches the dielectric layer;    a metal layer formed on the dielectric layer which holds a static capacity between the metal film of the via-hole and the metal layer; and    a bipolar transistor, mounted on the semiconductor substrate, which has a common base circuit having a base terminal electrically connected to the metal layer.    
   
   
       16 . An RF amplifier comprising: 
 a semiconductor substrate;    a dielectric layer which is formed on a first main surface of the semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through a second main surface of the semiconductor substrate until the hole reaches the dielectric layer;    a metal layer formed on the dielectric layer which holds a static capacity between the metal film of the via-hole and the metal layer;    a resistance element whose one terminal is electrically connected to the via-hole and the other terminal to the metal layer; and    a field effective transistor mounted on the semiconductor substrate whose source terminal is connected to the other terminal of the resistance element connected to the metal layer, so as to form a self bias circuit.    
   
   
       17 . An RF passive circuit comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a dielectric layer which is formed on an inside wall of the via-hole; and    a wiring metal layer formed on the dielectric layer, which holds a static capacity between the via-hole.    
   
   
       18 . The RF passive circuit of  claim 17 , further comprising: 
 a resistance element whose one terminal is electrically connected to the metal film of the via-hole, and the other terminal to the wiring metal layer.    
   
   
       19 . An RF amplifier comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a dielectric layer which is formed on an inside wall of the via-hole;    a wiring metal layer formed on the dielectric layer, which holds a static capacity between the via-hole; and    a field effective transistor, mounted the semiconductor substrate, which has a common gate circuit having a gate terminal electrically connected to the wiring metal layer.    
   
   
       20 . An RF amplifier comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a dielectric layer which is formed on an inside wall of the via-hole;    a wiring metal layer formed on the dielectric layer, which holds a static capacity between the via-hole; and    a bipolar transistor, mounted on the semiconductor substrate, which has a common base circuit having a base terminal electrically connected to the wiring metal layer.    
   
   
       21 . An RF amplifier comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a dielectric layer which is formed on an inside wall of the via-hole;    a wiring metal layer formed on the dielectric layer, which holds a static capacity between the via-hole;    a resistance element whose one terminal is electrically connected to the metal film of the via-hole and the other terminal to the metal layer; and    a field effective transistor mounted the semiconductor substrate whose source terminal is connected to the other terminal of the resistance element connected to the metal layer, so as to form a self bias circuit.    
   
   
       22 . An RF passive circuit comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a first dielectric layer which is formed on an inside wall of the via-hole;    a first wiring metal layer formed on the first dielectric layer which equivalently forms a first capacity element between the via-hole;    a second dielectric layer which is formed on the first wiring metal layer; and    a second wiring metal layer formed on the second dielectric layer which equivalently forms a second capacity element between the first wiring metal layer,    wherein the via-hole and the second wiring metal layer are electrically connected, and the sum of static capacity of the first capacity element and the second capacity element are held between the via-hole and the first wiring metal layer.    
   
   
       23 . The RF passive circuit of  claim 22 , further comprising: 
 a resistance element whose terminal is electrically connected either to the second wiring metal layer or to the via-hole, and the other terminal to the first wiring metal layer.    
   
   
       24 . An RF amplifier comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a first dielectric layer which is formed on an inside wall of the via-hole;    a first wiring metal layer formed on the first dielectric layer which equivalently forms a first capacity element between the via-hole;    a second dielectric layer which is formed on the first wiring metal layer;    a second wiring metal layer formed on the second dielectric layer which equivalently forms a second capacity element between the first wiring metal layer,    the via-hole and the second wiring metal layer being electrically connected, and the sum of static capacity of the first capacity element and the second capacity element being held between the via-hole and the first wiring metal layer; and    a field effective transistor, mounted on the semiconductor substrate, which has a common gate circuit having a gate terminal electrically connected to the first wiring metal layer.    
   
   
       25 . An RF amplifier comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole through the semiconductor substrate;    a first dielectric layer which is formed on an inside wall of the via-hole;    a first wiring metal layer formed on the first dielectric layer which equivalently forms a first capacity element between the via-hole;    a second dielectric layer which is formed on the first wiring metal layer;    a second wiring metal layer formed on the second dielectric layer which equivalently forms a second capacity element between the first wiring metal layer,    the via-hole and the second wiring metal layer being electrically connected, and the sum of static capacity of the first capacity element and the second capacity element being held between the via-hole and the first wiring metal layer; and    a bipolar transistor, mounted on the semiconductor substrate, which has a common base circuit having a base terminal electrically connected to the first wiring metal layer.    
   
   
       26 . An RF amplifier comprising: 
 a semiconductor substrate;    a via-hole which is formed by applying a metal film on an inside wall of a hole provided through the semiconductor substrate;    a first dielectric layer which is formed on an inside wall of the via-hole;    a first wiring metal layer formed on the first dielectric layer which equivalently forms a first capacity element between the via-hole;    a second dielectric layer which is formed on the first wiring metal layer;    a second wiring metal layer formed on the second dielectric layer which equivalently forms a second capacity element between the first wiring metal layer,    the via-hole and the second wiring metal layer being electrically connected, and the sum of static capacity of the first capacity element and the second capacity element being held between the via-hole and the first wiring metal layer;    a resistance element whose one terminal is electrically connected either to the second wiring metal layer or to the via-hole, and the other terminal to the first wiring metal layer; and    a field effective transistor mounted on the semiconductor substrate whose source terminal is connected to the one terminal of the resistance element connected either to the second wiring metal layer or to the via-hole, so as to form a self bias circuit.