Single-substrate-heat-processing apparatus for performing reformation and crystallization

Abstract

An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.

1 - 20 . (canceled)  
   
   
       21 . An apparatus for reforming a target film disposed on a target object and comprising one of a metal oxide film, a metal film, and a metal nitride film, the apparatus comprising: 
 a process chamber configured to be vacuum-exhausted;    a worktable configured to place the target object thereon;    a reformation gas supply portion configured to supply a reformation gas into the process chamber;    a reformation light ray emitting portion disposed above a ceiling portion of the process chamber and configured to emit reformation light rays including ultraviolet rays and infrared rays;    a transmission window disposed at the ceiling portion and configured to transmit therethrough the reformation light rays into the process chamber; and    a scanning reflection mirror portion disposed above the ceiling portion and configured to scan a surface of the target object with the reformation light rays through the transmission window, the scanning reflection mirror portion being configured to rotate while reflecting the reformation light rays, to scan the surface of the target object.    
   
   
       22 . The apparatus according to  claim 21 , wherein the scanning reflection mirror portion is configured to rotate at a highest speed when reflecting the reformation light rays vertically downward, and at a lower speed with increase in rotation angle on either side, to scan the surface of the target object.  
   
   
       23 . The apparatus according to  claim 21 , wherein the reformation light ray emitting portion comprises lamps respectively configured to emit ultraviolet rays and infrared rays.  
   
   
       24 . The apparatus according to  claim 21 , wherein the reformation light ray emitting portion comprises an electrodeless microwave lamp configured to emit ultraviolet rays and infrared rays.  
   
   
       25 . The apparatus according to  claim 21 , wherein the reformation light rays are emitted from a lamp as diffused light.  
   
   
       26 . An apparatus for reforming a target film disposed on a target object and comprising one of a metal oxide film, a metal film, and a metal nitride film, the apparatus comprising: 
 a process chamber configured to be vacuum-exhausted;    a worktable configured to place the target object thereon;    a reformation gas supply portion configured to supply a reformation gas into the process chamber;    a reformation light ray emitting portion disposed above a ceiling portion of the process chamber and configured to emit reformation light rays including ultraviolet rays and infrared rays;    a transmission window disposed at the ceiling portion and configured to transmit therethrough the reformation light rays into the process chamber; and    a scanning mechanism disposed above the ceiling portion and configured to scan a surface of the target object with the reformation light rays through the transmission window, the scanning mechanism being configured to cause a scanning speed of the reformation light rays to be lower at a scanning start side and a scanning end side of the target object, to scan the surface of the target object.    
   
   
       27 . The apparatus according to  claim 26 , wherein the scanning mechanism is configured to move the reformation light ray emitting portion in a scanning manner above the ceiling portion.  
   
   
       28 . The apparatus according to  claim 26 , wherein the reformation light ray emitting portion comprises lamps respectively configured to emit ultraviolet rays and infrared rays.  
   
   
       29 . The apparatus according to  claim 26 , wherein the reformation light ray emitting portion comprises an electrodeless microwave lamp configured to emit ultraviolet rays and infrared rays.  
   
   
       30 . The apparatus according to  claim 26 , wherein the reformation light rays are emitted from a lamp as diffused light.  
   
   
       31 . An apparatus for reforming a target film disposed on a target object and comprising one of a metal oxide film, a metal film, and a metal nitride film, the apparatus comprising: 
 a process chamber configured to be vacuum-exhausted; a worktable configured to place the target object thereon; a reformation gas supply portion configured to supply a reformation gas into the process chamber;    a reformation light ray emitting portion disposed above a ceiling portion of the process chamber and configured to emit reformation light rays including ultraviolet rays and infrared rays in a horizontal direction;    a transmission window disposed at the ceiling portion and configured to transmit therethrough the reformation light rays into the process chamber; and    a scanning reflection mirror portion disposed above the ceiling portion and configured to scan a surface of the target object with the reformation light rays through the transmission window, the scanning reflection mirror portion being configured to move at a lower speed with increase in distance from the reformation light ray emitting portion while reflecting the reformation light rays, to scan the surface of the target object.    
   
   
       32 . The apparatus according to  claim 31 , wherein the scanning reflection mirror portion is configured to reflect the reformation light rays vertically downward.  
   
   
       33 . The apparatus according to  claim 31 , wherein the reformation light ray emitting portion comprises lamps respectively configured to emit ultraviolet rays and infrared rays.  
   
   
       34 . The apparatus according to  claim 31 , wherein the reformation light ray emitting portion comprises an electrodeless microwave lamp configured to emit ultraviolet rays and infrared rays.  
   
   
       35 . The apparatus according to  claim 31 , wherein the reformation light rays are emitted from a lamp as diffused light.