Method and apparatus for forming interconnects

Abstract

An interconnects-forming method can form a film of interconnect material, having a sufficient adhesion, by electroplating uniformly on an entire surface of a substrate and thus can form highly-reliable embedded interconnects even when the design rule is strict, and which can remove an extra interconnect material at a lower pressure. The interconnects-forming method, including: forming a conductive film on a surface of a substrate having interconnect recesses formed in an insulating film, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material; forming a film of the interconnect material by electroplating on a surface of the conductive film serving as a seed film while filling the interconnect recesses with the interconnect material; and removing an extra interconnect material of the film formed on the conductive film, thereby forming interconnects of the interconnect material embedded in the interconnect recesses.

1 . An interconnects-forming method, comprising: 
 forming a conductive film on a surface of a substrate having interconnect recesses formed in an insulating film, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material;    forming a film of the interconnect material by electroplating on a surface of the conductive film serving as a seed film while filling the interconnect recesses with the interconnect material; and    removing an extra interconnect material of the film formed on the conductive film, thereby forming interconnects of the interconnect material embedded in the interconnect recesses.    
   
   
       2 . The interconnects-forming method according to  claim 1 , wherein after the formation of the conductive film, the conductive film is subjected to pre-processing prior to the formation of the film of the interconnect material by electroplating.  
   
   
       3 . The interconnects-forming method according to  claim 1 , wherein after the formation of the interconnects, the conductive film present outside the interconnect recesses is removed.  
   
   
       4 . The interconnects-forming method according to  claim 1 , wherein the conductive film contains palladium, rhodium or ruthenium.  
   
   
       5 . The interconnects-forming method according to  claim 1 , wherein the interconnect material comprises copper, a copper alloy, silver or a silver alloy.  
   
   
       6 . The interconnects-forming method according to  claim 1 , wherein a metal film is formed selectively on the surfaces of interconnects.  
   
   
       7 . An interconnects-forming method, comprising: 
 forming an adhesive film on a surface of a substrate having interconnect recesses formed in an insulating film;    forming a conductive film on a surface of the adhesive film, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material;    forming a film of the interconnect material by electroplating on a surface of the conductive film serving as a seed film while filling the interconnect recesses with the interconnect material; and    removing an extra interconnect material of the film formed on the conductive film, thereby forming interconnects of the interconnect material embedded in the interconnect recesses.    
   
   
       8 . The interconnects-forming method according to  claim 7 , wherein after the formation of the conductive film, the conductive film is subjected to pre-processing prior to the formation of the film of the interconnect material by electroplating.  
   
   
       9 . The interconnects-forming method according to  claim 7 , wherein after the formation of the interconnects, the conductive film and the adhesive film both present outside the interconnect recesses are removed.  
   
   
       10 . The interconnects-forming method according to  claim 7 , wherein the adhesive film contains tungsten, tantalum or titanium.  
   
   
       11 . The interconnects-forming method according to  claim 7 , wherein the conductive film contains palladium, rhodium or ruthenium.  
   
   
       12 . The interconnects-forming method according to  claim 8 , wherein the interconnect material comprises copper, a copper alloy, silver or a silver alloy.  
   
   
       13 . The interconnects-forming method according to  claim 7 , wherein a metal film is formed selectively on the surfaces of interconnects.  
   
   
       14 . An interconnects-forming apparatus, comprising: 
 a conductive film-forming apparatus for forming a conductive film on a surface of a substrate having interconnect recesses, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material;    an electroplating apparatus for forming a film of the interconnect material on a surface of the conductive film; and    a polishing apparatus for removing an extra interconnect material of the film formed on the conductive film.    
   
   
       15 . The interconnects-forming apparatus according to  claim 14 , further comprising a conductive film removal apparatus for removing the conductive film present outside the interconnect recesses.  
   
   
       16 . The interconnects-forming apparatus according to  claim 14 , further comprising an adhesive film-forming apparatus for forming an adhesive film on the surface of the substrate having the interconnect recesses.  
   
   
       17 . The interconnects-forming apparatus according to  claim 14 , further comprising an adhesive film removal apparatus for removing the adhesive film present outside the interconnect recesses.  
   
   
       18 . The interconnects-forming apparatus according to  claim 14 , wherein the electroplating apparatus includes a dummy resistor disposed between an anode and the substrate upon plating.  
   
   
       19 . The interconnects-forming apparatus according to  claim 14 , wherein the polishing apparatus is comprised of an electrolytic polishing apparatus.  
   
   
       20 . The interconnects-forming apparatus according to  claim 19  further comprising a metal film-forming apparatus for forming a metal film selectively on the surfaces of interconnects.