Semiconductor device

Abstract

In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.

1 . A semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, wherein 
 said interlayer insulating film is formed on said metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and    a silicon oxynitride film is provided in an underlayer of said metal interconnection and said interlayer insulating film.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film is formed immediately under said metal interconnection.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film is formed immediately over an etch stopper film of said gate electrode.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film is formed in said contact layer.  
   
   
       5 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film is formed by plasma CVD.  
   
   
       6 . The semiconductor device according to  claim 5 , wherein said silicon oxynitride film is formed using source gas containing either N 2 O or O 2 , and SiH 4 .  
   
   
       7 . The semiconductor device according to  claim 6 , wherein said silicon oxynitride film has Si of 34 atomic % to 40 atomic %, O of 48 atomic % to 60 atomic %, and N of 5 atomic % to 12 atomic %.  
   
   
       8 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film is subjected to heat treatment at a temperature of not lower than 450° C.  
   
   
       9 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film has H in Si—H bonds of not more than 8×10 21  atoms/cm 3  by Fourier transform infrared (FT-IR) spectroscopy.  
   
   
       10 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film has N, B, P or As introduced therein.  
   
   
       11 . The semiconductor device according to  claim 1 , wherein in said silicon oxynitride film, H in Si—H bonds is not more than 1×10 21  atoms/cm 3  by FT-IR spectroscopy, peak of Si—O bonds is at a wave number of not less than 1020 cm −1  and not more than 1075 cm −1  by FT-IR spectroscopy, and no peak of Si—N bonds (wave number: 835 cm −1 ) is detected by FT-IR spectroscopy.  
   
   
       12 . The semiconductor device according to  claim 11 , wherein said silicon oxynitride film has tensile stress.  
   
   
       13 . The semiconductor device according to  claim 1 , wherein said silicon oxynitride film has a thickness of not less than 100 nm and not more than 600 nmn.  
   
   
       14 . The semiconductor device according to  claim 1 , wherein said interlayer insulating film is formed by high-density plasma CVD.  
   
   
       15 . The semiconductor device according to  claim 1 , wherein a plurality of layers of said metal interconnections and a plurality of layers of said interlayer insulating films are formed.  
   
   
       16 . The semiconductor device according to  claim 1 , including a tunnel insulating film, a control electrode, a floating electrode, and a first metal interconnection, wherein the first metal interconnection has a ratio H/W of a height H of the interconnection to a distance W between the neighboring interconnections, and the ratio H/W is not less than 1.0.