Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors

Abstract

One preferred method for use in making a magnetic write head with use of the resist channel shrinking solution includes the steps of forming a first pole piece layer of a first pole piece; forming a gap layer over the first pole piece layer; forming a patterned resist over the first pole piece layer and the gap layer; electroplating a first pedestal portion of a second pole piece over the gap layer within a channel of the patterned resist; forming an oxide layer over the first pedestal portion; applying the resist channel shrinking solution comprising the resist channel shrinking film and the corrosion inhibitors over the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel; removing the resist channel shrinking solution; electroplating a second pedestal portion of the second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the structure. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pole piece during the act of baking the resist channel shrinking solution.

1 . A method for use in making a magnetic head, the method comprising the acts of: 
 forming a first pole piece layer of a first pole piece;    forming a gap layer over the first pole piece layer;    forming a patterned resist over the gap layer;    electroplating a first pedestal portion of a second pole piece over the gap layer within a channel of the patterned resist;    applying, over the patterned resist, a resist channel shrinking solution comprising a resist channel shrinking film;    baking the resist channel shrinking solution to thereby reduce a width of the channel of the patterned resist;    removing the resist channel shrinking solution;    electroplating a second pedestal portion of the second pole piece within the reduced-width channel of the patterned resist;    removing the patterned resist; and    milling the second pedestal portion, using the first pedestal portion as a mask, for forming a write head structure of the magnetic head.    
   
   
       2 . The method of  claim 1 , wherein the resist channel shrinking solution comprises the resist channel shrinking film and corrosion inhibitors.  
   
   
       3 . The method of  claim 2 , wherein the corrosion inhibitors comprising 0.4-1.5% of the resist channel shrinking solution by weight.  
   
   
       4 . The method of  claim 2 , wherein the corrosion inhibitors of the resist channel shrinking solution comprise 1,2,3-Benzotriazole (BTA).  
   
   
       5 . The method of  claim 1 , wherein the reduced-width channel is reduced such that the second pedestal portion is centered relative to the first pedestal portion.  
   
   
       6 . The method of  claim 1 , further comprising: 
 forming an oxide layer over the first pedestal portion.    
   
   
       7 . The method of  claim 2 , wherein the corrosion inhibitors of the resist channel shrinking solution reduce corrosion of the first pedestal portion of the second pole piece during the act of baking.  
   
   
       8 . The method of  claim 1 , wherein the first pedestal portion comprises nickel-iron (Ni 22 Fe 78 ).  
   
   
       9 . A method for use in making a device structure, comprising the acts of: 
 forming, within a channel of a patterned resist, a first pedestal portion;    applying, within the channel of the patterned resist, a resist channel shrinking solution comprising a resist channel shrinking film and corrosion inhibitors;    baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel of the patterned resist;    removing the resist channel shrinking solution; and    forming a second pedestal portion within the reduced-width channel of the patterned resist.    
   
   
       10 . The method of  claim 9 , further comprising: 
 forming an oxide layer over the first pedestal portion.    
   
   
       11 . The method of  claim 9 , wherein the corrosion inhibitors comprise 0.4-1.5% of the resist channel shrinking solution by weight.  
   
   
       12 . The method of  claim 9 , wherein the corrosion inhibitors of the resist channel shrinking solution comprise an azole.  
   
   
       13 . The method of  claim 9 , further comprising: 
 wherein the first and the second pedestal portions help form part of a second pole piece of the magnetic head;    removing the patterned resist; and    milling the second pedestal portion, using the first pedestal portion as a mask, for forming a write head structure of the magnetic head.    
   
   
       14 . The method of  claim 9 , wherein the first and the second pedestal portions comprise part of a second pole piece, the method further comprising: 
 prior to forming the first pedestal portion, forming a first pole piece layer of a first pole piece; and    forming a gap layer over the first pole piece layer.    
   
   
       15 . The method of  claim 9 , wherein the acts of forming comprise electroplating the first and the second pedestal portions.  
   
   
       16 . The method of  claim 9 , further comprising: 
 forming an oxide layer over the first pedestal portion; and    wherein the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion formation during the act of baking.    
   
   
       17 . The method of  claim 9 , wherein the gap layer comprises one of a non-magnetic insulator and a non-magnetic metal.  
   
   
       18 . The method of  claim 9 , wherein the corrosion inhibitors of the resist channel shrinking solution reduce corrosion formation during the act of baking.  
   
   
       19 . The method of  claim 9 , wherein the second pole piece comprises nickel-iron (Ni 22 Fe 78 ).  
   
   
       20 . A method for use in forming a device structure, comprising the acts of: 
 forming, within a channel of a patterned resist, a first pedestal portion;    applying, within the channel of the patterned resist, a resist channel shrinking solution comprising a resist channel shrinking film and corrosion inhibitors; and    baking the resist channel shrinking solution over the patterned resist, to thereby reduce a width of the channel above the first pedestal portion.    
   
   
       21 . The method of  claim 20 , further comprising: 
 removing the resist channel shrinking solution; and    forming a second pedestal portion within the reduced-width channel of the patterned resist.    
   
   
       22 . The method of  claim 20 , further comprising: 
 forming an oxide layer over the first pedestal portion.    
   
   
       23 . The method of  claim 20 , further comprising: 
 forming an oxide layer over the first pedestal portion;    removing the resist channel shrinking solution;    forming a second pedestal portion within the reduced-width channel of the patterned resist; and    wherein the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion formation during the act of baking.    
   
   
       24 . A resist channel shrinking solution, comprising: 
 a resist channel shrinking film; and    corrosion inhibitors.    
   
   
       25 . The solution of  claim 24 , wherein the corrosion inhibitors comprise 0.4-1.5% of the solution by weight.  
   
   
       26 . The solution of  claim 24 , wherein the corrosion inhibitors comprise 1,2,3-Benzotriazole (BTA).  
   
   
       27 . The solution of  claim 24 , wherein the corrosion inhibitors comprise an azole and 0.4-1.5% of the solution by weight.  
   
   
       28 . The solution of  claim 24 , wherein the corrosion inhibitors of the resist channel shrinking solution help reduce corrosion of a metallic layer after baking the solution.  
   
   
       29 . The solution of  claim 24 , wherein the resist channel shrinking film is characterized by a shrinkage during baking of the solution.  
   
   
       30 . The solution of  claim 24 , which is suitable for use in reducing a width of a channel of a resist structure.