Protected substrate structure for a field emission dispaly device
Abstract
A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.
Claims
exact text as granted — not AI-modified1 . A protected faceplate structure of a field emission display device, said protected faceplate structure comprising:
a) a faceplate of a field emission display device, said faceplate comprising phosphor containing wells disposed above one side thereof; b) an opaque matrix for separating subpixel regions of said faceplate; and c) a barrier layer disposed over said opaque matrix and said subpixel regions of said faceplate, wherein said barrier layer prevents penetration by electrons directed towards said faceplate.
2 . The protected faceplate structure of a field emission display device of claim 1 , wherein said faceplate is comprised of a high-sodium glass substrate.
3 . The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer is comprised of a substantially transparent, electron-damage resistant material.
4 . The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons through said barrier layer such that said electrons do not impinge said faceplate.
5 . The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer is selected from the group consisting of silicon dioxide, Al 2 O 3 , CrOx, ZnO, Si 3 N 4 , SiO 2 , TaO 5 , Tin Oxide, ITO, ZrO 2 , Y 2 O 3 , TiO 2 , and MgO and combinations thereof.
6 . The protected faceplate structure of a field emission display device of claim 5 , wherein said barrier layer has a thickness of approximately 100 nanometers.
7 . The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer prevents the migration of contaminants from said faceplate into said field emission display device.
8 . The protected faceplate structure of a field emission display device of claim 2 , wherein said barrier layer prevents the migration of sodium from said faceplate into said field emission display device.
9 . The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer is electrically conductive.
10 . A protected cathode substrate structure of a field emission display device, said protected cathode substrate structure comprising:
a) a cathode substrate of a field emission display device, said cathode substrate comprising an electron emitting structure disposed above one side thereof, wherein said cathode substrate comprises high-sodium glass; and b) a substantially continuous barrier layer of substantially uniform thickness disposed over said one side of said cathode substrate, wherein said barrier layer prevents electron bombardment by electrons originating from said electron emitting structure.
11 . (canceled)
12 . The protected cathode substrate structure of a field emission display device of claim 10 , wherein said barrier layer is comprised of a substantially transparent, electron-damage resistant material.
13 . The protected cathode substrate structure of a field emission display device of claim 10 , wherein said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons through said barrier layer such that said electrons do not impinge said cathode substrate.
14 . The protected cathode substrate structure of a field emission display device of claim 10 , wherein said barrier layer is comprised of silicon dioxide, Al 2 O 3 , CrOx, ZnO, Si 3 N 4 , SiO 2 , TaO 5 , Tin Oxide, ITO, ZrO 2 , Y 2 O 3 , TiO 2 , and MgO and combinations thereof.
15 . The protected cathode substrate structure of a field emission display device of claim 14 , wherein said barrier layer has a thickness of approximately 100 nanometers.
16 . The protected cathode substrate structure of a field emission display device of claim 10 , wherein said barrier layer prevents the migration of contaminants from said cathode substrate into said field emission display device.
17 . The protected cathode substrate structure of a field emission display device of claim 10 , wherein said barrier layer prevents the migration of sodium from said cathode substrate into said field emission display device.
18 . The protected cathode substrate structure of a field emission display device of claim 10 , wherein said barrier layer is electrically conductive.
19 . A method for protecting a substrate structure of a field emission display device, said method comprising the steps of:
a) providing a faceplate structure of a field emission display device, said faceplate structure comprising an opaque matrix for separating subpixel regions of said faceplate structure; and b) disposing a barrier layer over said opaque matrix and over said subpixel regions of said faceplate structure, wherein said barrier layer prevents penetration by electrons.
20 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein said substrate structure comprises a faceplate of said field emission display device.
21 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein said substrate structure comprises a cathode substrate of said field emission display device.
22 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step a) comprises providing a high-sodium glass substrate structure for said field emission display device.
23 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step b) comprises disposing said barrier layer over said substrate structure wherein said barrier layer is comprised of a substantially transparent, electron-damage resistant material.
24 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step b) comprises disposing said barrier layer over said substrate structure such that said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons therethrough.
25 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step b) comprises disposing a barrier layer over said substrate structure wherein said barrier layer is selected from the group consisting of silicon dioxide, Al 2 O 3 , CrOX, ZnO, Si 3 N 4 , SiO 2 , TaO 5 , Tin Oxide, ITO, ZrO 2 , Y 2 O 3 , TiO 2 and MgO and combinations thereof.
26 . The method for protecting a substrate structure of a field emission display device as recited in claim 25 wherein step b) comprises disposing said barrier layer to a thickness of approximately 100 nanometers over said substrate structure.
27 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step b) comprises disposing said barrier layer over said substrate structure wherein said barrier layer prevents migration of contaminants from said substrate structure into said field emission display device.
28 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step b) comprises disposing said barrier layer over said substrate structure such that said barrier layer prevents migration of sodium from said substrate structure into said field emission display device.
29 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 wherein step b) comprises disposing an electrically conductive barrier layer over said substrate structure.
30 . The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer includes a selectively light absorbing component.
31 . The protected faceplate structure of a field emission display device of claim 30 , wherein said selectively light absorbing component is selected from the group consisting of dyes and pigments.
32 . The protected faceplate structure of a field emission display device of claim 30 , wherein each subpixel of said faceplate includes a different selectively light absorbing component.
33 . The method for protecting a substrate structure of a field emission display device as recited in claim 19 , wherein said barrier layer includes a selectively light absorbing component.
34 . The method for protecting a substrate structure of a field emission display device as recited in claim 33 , wherein said selectively light absorbing component is selected from the group consisting of dyes and pigments.
35 . The method for protecting a substrate structure of a field emission display device as recited in claim 33 , wherein each subpixel of said faceplate includes a different selectively light absorbing component.
36 . A protected cathode substrate structure of a field emission display device, said protected cathode substrate comprising:
a) a cathode substrate of a field emission display device, said cathode substrate comprising an electron emitting structure disposed above one side thereof; and b) a substantially continuous barrier layer of substantially uniform thickness disposed over said one side of said cathode substrate, wherein said barrier layer prevents electron bombardment by electrons originating from said electron emitting structure, and wherein said barrier layer is selected from the group consisting of Al 2 O 3 , CrOx, ZnO, Si 3 N 4 , SiO 2 , TaO 5 , Tin Oxide, ITO, ZrO 2 , Y 2 O 3 , TiO 2 , and MgO and combinations thereof.
37 . The protected cathode substrate structure of a field emission display device of claim 36 , wherein said cathode is comprised of a high-sodium glass.
38 . The protected cathode substrate structure of a field emission display device of claim 36 , wherein said barrier layer is comprised of a substantially transparent, electron-damage resistant material.
39 . The protected cathode substrate structure of a field emission display device of claim 36 , wherein said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons through said barrier layer such that said electrons do not impinge said cathode structure.
40 . The protected cathode substrate structure of a field emission display device of claim 36 , wherein said barrier layer has a thickness of approximately 100 nanometers.
41 . The protected cathode substrate structure of a field emission display device of claim 36 , wherein said barrier layer prevents the migration of contaminants from said cathode substrate into said field emission display device.
42 . The protected cathode substrate structure of a field emission display device of claim 41 , wherein said barrier layer prevents the migration of sodium from said cathode substrate into said field emission display device.Cited by (0)
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