Nanotechnological processing to a copper oxide superconductor increasing critical transition temperature

Abstract

A method for forming a superconductor material includes the steps of forming a substrate, placing the substrate in compressive stress, forming a hilly region on the substrate, and applying varying layering of copper, copper oxide, and selected interstitial atomic species.

1 ) A method for forming a superconductor material, comprising the steps of: 
 forming a substrate;    placing said substrate in compressive stress;    forming a hilly region on said substrate.    
   
   
       2 ) A method for forming a superconductor material as in  claim 1  wherein said hilly region includes a convex region and a concave region.  
   
   
       3 ) A method for forming a superconductor material as in  claim 1 , wherein said method includes the step of forming copper-oxygen-copper bonds on said hilly region.  
   
   
       4 ) A method for forming a superconductor material as in  claim 1 , wherein said method includes the step of applying tensile stress to said substrate.  
   
   
       5 ) A method for forming a superconductor material as in  claim 1 , wherein said method includes the step of applying a copper-oxygen mix to said hilly region.  
   
   
       6 ) A method for forming a superconductor material as in  claim 1 , wherein said method includes the step of forming a copper layer on said substrate before said compressive stress is applied.  
   
   
       7 ) A method for forming a superconductor material as in  claim 5 , wherein said method includes the step of depositing a first interstitial atomic species upon said copper-oxide layer.  
   
   
       8 ) A method for forming a superconductor material as in  claim 7 , wherein said method includes the step of depositing a second copper-oxide layer.  
   
   
       9 ) A method for forming a superconductor material as in  claim 8 , wherein said method includes the step of depositing a second interstitial atomic species and a third copper-oxide layer upon said second copper-oxide layer.  
   
   
       10 ) A method for forming a superconductor material as in  claim 1 , wherein said method includes the step of releasing compressive stress of said substrate.  
   
   
       11 ) An apparatus forming a superconductor material, comprising an atomic layer deposition apparatus to deposit a substrate; said atomic layer deposition apparatus applying compressive stress to said substrate; and 
 said atomic layer deposition apparatus forming a hilly region on said substrate.    
   
   
       12 ) An apparatus for forming a superconductor material as in  claim 11  wherein said hilly region includes a convex region and a concave region.  
   
   
       13 ) An apparatus for forming a superconductor material as in  claim 11 , wherein said atomic layer deposition apparatus forms copper-oxygen-copper bonds on said hilly region.  
   
   
       14 ) An apparatus for forming a superconductor material as in  claim 11 , wherein said atomic layer deposition apparatus applies tensile stress to said substrate.  
   
   
       15 ) An apparatus for forming a superconductor material as in  claim 11 , wherein said atomic layer deposition apparatus applies a copper-oxygen mix to said hilly region.  
   
   
       16 ) An apparatus for forming a superconductor material as in  claim 11 , wherein said atomic layer deposition apparatus forms a copper layer on said substrate before said compressive stress is applied.  
   
   
       17 ) An apparatus for forming a superconductor material as in  claim 11 , wherein said atomic layer deposition apparatus applies a vacuum purge followed by an argon purge.  
   
   
       18 ) An apparatus for forming a superconductor material as in  claim 10 , wherein said atomic layer deposition apparatus applies multiple interstitial atomic layers and multiple copper oxide layers on said substrate.  
   
   
       19 ) An apparatus for forming a superconductor material as in  claim 11  wherein said atomic layer deposition apparatus releases said compressive stress of said substrate.  
   
   
       20 ) An apparatus for forming a superconductor material as in  claim 14 , wherein said atomic layer deposition apparatus releases said tensile stress of said substrate.