Semiconductor device and method of manufacturing the same

Abstract

An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.

1 . A method of manufacturing a semiconductor device comprising: 
 forming a first layer made of a material containing silicon on a base substance;    forming a second layer containing metal and nitrogen on said first layer; and    exposing said second layer to active species obtained from plasma in an atmosphere including reducing gas.    
   
   
       2 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said first layer is made of any one of materials selected from a group including silicon oxide, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, and silicon oxycarbonitride.    
   
   
       3 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said second layer contains at least a material selected from a group including tantalum (Ta), titanium (Ti), tungsten (W), and zirconium (Zr).    
   
   
       4 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said second layer is formed by atomic layer deposition method.    
   
   
       5 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said reducing gas is gas including hydrogen.    
   
   
       6 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said reducing gas is mixed gas of hydrogen gas and helium gas.    
   
   
       7 . A method of manufacturing a semiconductor device according to  claim 6 , 
 wherein a concentration of said hydrogen gas in said mixed gas ranges not less than 1% and not more than 10%.    
   
   
       8 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said second layer is changed to a layer including said silicon by exposing said second layer to said active species.    
   
   
       9 . A method of manufacturing a semiconductor device according to  claim 1 , 
 wherein said second layer is changed to a layer including silicon, and said second layer is changed to a layer, in which metal concentration of said second layer is decreased toward a direction of said base substance while silicon concentration of said second layer is increased toward said direction of said base substance, by exposing said second layer to said active species.    
   
   
       10 . A semiconductor device comprising: 
 a base substance including a semiconductor layer;    an insulating interlayer provided on said base substance;    a barrier metal layer provided along an inner wall of an opening provided in said insulating interlayer; and    a conducting film provided on said barrier metal layer to fill said opening,    wherein said barrier metal layer contains metal, silicon, and nitrogen, a concentration of silicon in said barrier metal layer is decreased from said insulating interlayer toward said conducting film.    
   
   
       11 . The semiconductor device according to  claim 10 , wherein a concentration of metal in said barrier metal layer is increased from said insulating interlayer toward said conducting film.  
   
   
       12 . The semiconductor device according to  claim 10 , 
 wherein a metal contains at least a material selected from a group including tantalum (Ta), titanium (Ti), tungsten (W), and zirconium (Zr).