Metal film vapor phase deposition method and vapor phase deposition apparatus

Abstract

A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active Cu x Cl y , wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the Cu x Cl y gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

1 . A copper film vapor phase deposition apparatus, comprising: 
 a reactor vessel in which a substrate to be processed is placed;    high-purity copper set in said reactor vessel to oppose said substrate;    a gas supply pipe inserted into said reactor vessel to supply a gas containing a gas selected from the group consisting of chlorine gas and hydrogen chloride gas to the vicinity of said high-purity copper;    plasma generating means for generating a plasma of a material selected from the group consisting of chlorine and hydrogen chloride in the vicinity of said high-purity copper in said reactor vessel; and    exhausting means for exhausting a gas in said reactor vessel.    
   
   
       2 . An apparatus according to  claim 1 , wherein said high-purity copper has the shape of a plate.  
   
   
       3 . An apparatus according to  claim 1 , further comprising: 
 first temperature control means for controlling the temperature of said high-purity copper.    
   
   
       4 . An apparatus according to  claim 1 , further comprising: 
 second temperature control means for controlling the temperature of said substrate.    
   
   
       5 . A copper film vapor phase deposition apparatus, comprising: 
 a reactor vessel in which a substrate to be processed is placed;    high-purity copper set in said reactor vessel to oppose said substrate;    a first gas supply pipe inserted into said reactor vessel to supply a gas containing chlorine to the vicinity of said high-purity copper;    a second gas supply pipe inserted into said reactor vessel to supply hydrogen to the vicinity of said high-purity copper;    plasma generating means for generating a plasma of chlorine and hydrogen in the vicinity of said high-purity copper in said reactor vessel; and    exhausting means for exhausting a gas in said reactor vessel.    
   
   
       6 . An apparatus according to  claim 5 , wherein said high-purity copper has the shape of a plate.  
   
   
       7 . An apparatus according to  claim 5 , further comprising: 
 first temperature control means for controlling the temperature of said high-purity copper.    
   
   
       8 . An apparatus according to  claim 5 , further comprising: 
 second temperature control means for controlling the temperature of said substrate.