MSD raised metal interface features

Abstract

Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films.

1 . An article for providing an electrical connection between at least a pair of electronic components, said article comprising: 
 a dielectric film having a first side, a second side and at least one metal-filled via, said dielectric film further having an etched film portion on at least said first side, said etched film portion including an etched surface adjacent to said metal filled via; and    a conductive bump extending upward from said at least one metal-filled via at said first side of said dielectric film, said conductive bump providing electrical connection to one of said at least a pair of electronic components.    
   
   
       2 . The article of  claim 1  wherein the conductive bump extends outwardly in x and y directions from said at least one metal-filled via to cover a portion of said etched surface.  
   
   
       3 . The article of  claim 1  comprising an array of co-planar conductive bumps.  
   
   
       4 . The article of  claim 3  wherein the array of co-planar conductive bumps are surrounded by the partially etched dielectric film thereby forming a non-conductive mask around the conductive bumps.