Micro-C-4 semiconductor die and method for depositing connection sites thereon
Abstract
A semiconductor die having multiple solder bumps, each having a diameter less than about 100 microns, and the method for making such a die are described. The solder bumps are preferably about 10 microns in diameter, and the pitch between the solder bumps is less than 100 microns, and preferably less than or equal to 10 microns. A thermal solder jet apparatus is utilized to deposit solder material to form the solder bumps. The apparatus includes a print head having a plurality of solder ejection ports. Each ejection port has an associated gas ejection conduit connected to a chamber containing one or more hydride films. The hydride film is heated to disassociate hydrogen gas. The hydrogen gas rapidly builds up in the conduit which leads to the ejection port which is loaded with a solder material and forces the ejection of the solder material from the port. A controller controls and choreographs the movements of the movable substrate and movable drive so as to accurately deposit material in desired locations on the semiconductor dies.
Claims
exact text as granted — not AI-modified1 - 43 . (canceled)
44 . A system for depositing solder on a plurality of connection sites located on semiconductor dies, said system comprising:
a movable substrate adapted to move at least one semiconductor die in a first plane; a drive including at least one print head, said drive adapted to move said print head in a second plane, said print head including a channel arranged and configured to utilize a gas produced from a metallic compound disposed within said print head to deposit on the semiconductor die a material ejected from a port in the print head and having a diameter of less than about 100 microns; and a controller for controlling the movements of said drive and said movable substrate.
45 . The system of claim 44 , wherein said movable substrate is adapted to move back and forth in said first plane.
46 . The system of claim 44 , wherein said drive is adapted to move said print head back and forth in said second plane.
47 . The system of claim 44 , wherein said first plane and said second plane are different.
48 . The system of claim 44 , wherein said first plane and said second plane are in parallel.
49 . The system of claim 44 , wherein said first plane and said second plane are vertically offset from each other.
50 . The system of claim 44 , wherein said movable drive comprises a rotatable shaft.
51 . The system of claim 50 , wherein at least four print heads are mounted on said rotatable shaft.
52 . The system of claim 51 , wherein at least two of said print heads eject and deposit the same material.
53 . The system of claim 52 , wherein each said head ejects and deposits a different material.
54 . The system of claim 53 , wherein a first of said print heads ejects and deposits a pre-cleaning solution.
55 . The system of claim 54 , wherein a second of said print heads ejects and deposits an adhesive metal.
56 . The system of claim 55 , wherein a third of said print heads ejects and deposits a solder material.
57 . The system of claim 56 , wherein said solder material contains lead.
58 . The system of claim 56 , wherein said solder material is lead-free.
59 . The system of claim 56 , wherein a fourth of said print heads deposits a passivation material.
60 . The system of claim 44 , wherein said print head ejects and deposits a solder material on said semiconductor die in multiple connection sites, each connection site being spaced by a pitch of less than about 100 microns.
61 . The system of claim 60 , wherein each connection site is spaced by a pitch of about 10 microns or less.
62 . The system of claim 44 , further comprising a source of thermal energy arranged and configured to induce said metallic compound within said print head to produce said gas.
63 . The system of claim 62 , wherein said source of thermal energy comprises a laser.
64 . A print head for ejecting a solder material, comprising:
a chamber including a metallic compound that generates a gas when heated; a reservoir including the solder material; a channel in communication with said chamber and said reservoir; and an ejection port in communication with said channel, wherein a pressure increase due to the generation of the gas in said chamber causes said solder material to be ejected from said ejection port.
65 . The print head of claim 64 , wherein said print head is configured to eject said solder material in such a way as to create a deposition of said solder material that has a diameter of about 10 microns or less.
66 . The print head of claim 64 , wherein said print head includes multiple ejection ports, each said ejection port being located and arranged so as to eject and deposit said solder material in a plurality of locations spaced by a pitch of less than about 100 microns.
67 . The print head of claim 66 , wherein said locations are spaced by a pitch of about 10 microns or less.
68 . The print head of claim 64 , wherein said metallic compound is a metallic hydride.
69 . The print head of claim 68 , wherein said metallic hydride comprises titanium hydride.
70 . The print head of claim 64 , further comprising a laser, wherein said laser heats said metallic compound to generate said gas.
71 . A system for depositing material comprising:
a movable substrate adapted to move in a first plane; a drive including at least one print head, said drive adapted to move said print head in a second plane, said print head including a chamber for containing a compound from which a gas can be produced, and a channel arranged and configured to eject a material driven by a blast of a gas produced within the print head from a chemical reaction of the compound to deposit the material on a surface of an object supported by the movable substrate.
72 . The system of claim 71 , wherein the print head is arranged and configured to provide a material deposit with a diameter of less than about 100 microns.
73 . The system of claim 71 , further comprising a controller for controlling movements of said drive and said movable substrate.
74 . The system of claim 71 , further comprising a source of thermal energy arranged and configured to induce the chemical reaction of said compound within said print head chamber to produce said burst of gas.
75 . The system of claim 74 , wherein said source of thermal energy comprises a laser.
76 . The system of claim 71 , wherein said first plane and said second plane are different.
77 . The system of claim 71 , wherein said first plane and said second plane are in parallel.
78 . The system of claim 71 , wherein said first plane and said second plane are vertically offset from each other.
79 . A system for depositing solder on a plurality of connection sites located on semiconductor dies, said system comprising:
a support adapted to move at least one semiconductor die in a first plane; a drive including at least one print head, said drive adapted to move said print head in a second plane, said print head including a channel arranged and configured to utilize a gas produced from a metallic compound disposed within said print head to deposit on the semiconductor die a material ejected from a port in the print head and having a diameter of less than about 100 microns; and a controller for controlling movements of said drive and said support.
80 . The system of claim 79 , wherein said support is adapted to move back and forth in said first plane.
81 . The system of claim 79 , wherein said drive is adapted to move said print head back and forth in said second plane.
82 . The system of claim 79 , wherein said first plane and said second plane are different.
83 . The system of claim 79 , wherein said first plane and said second plane are in parallel.
84 . The system of claim 79 , wherein said first plane and said second plane are vertically offset from each other.
85 . The system of claim 79 , wherein said drive comprises a rotatable shaft.
86 . The system of claim 85 , wherein at least four print heads are mounted on said rotatable shaft.
87 . The system of claim 86 , wherein at least two of said print heads eject and deposit the same material.
88 . The system of claim 86 , wherein each print head ejects and deposits a different material.
89 . The system of claim 88 , wherein a first of said print heads ejects and deposits a pre-cleaning solution.
90 . The system of claim 89 , wherein a second of said print heads ejects and deposits an adhesive metal.
91 . The system of claim 90 , wherein a third of said print heads ejects and deposits a solder material.
92 . The system of claim 91 , wherein said solder material contains lead.
93 . The system of claim 91 , wherein said solder material is lead-free.
94 . The system of claim 91 , wherein a fourth of said print heads deposits a passivation material.
95 . The system of claim 79 , wherein said print head ejects and deposits a solder material on said semiconductor die in multiple connection sites, each said connection site being spaced by a pitch of less than about 100 microns.
96 . The system of claim 95 , wherein each said connection site is spaced by a pitch of about 10 microns or less.
97 . The system of claim 79 , further comprising a source of thermal energy arranged and configured to induce said metallic compound within said print head to produce said gas.
98 . The system of claim 97 , wherein said source of thermal energy comprises a laser.
99 . A system for depositing material comprising:
a carrier adapted to move in a first plane; and a drive including at least one print head, said drive adapted to move said print head in a second plane, said print head including a chamber for containing a compound from which a gas can be produced, and a channel arranged and configured to eject a material driven by a blast of a gas produced within the print head from a chemical reaction of the compound to deposit the material on a surface of an object supported by the carrier.
100 . The system of claim 99 , wherein the print head is arranged and configured to provide a material deposit with a diameter of less than about 100 microns.
101 . The system of claim 99 , further comprising a controller for controlling movements of said drive and said carrier.
102 . The system of claim 99 , further comprising a source of thermal energy arranged and configured to induce the chemical reaction of said compound within said print head chamber to produce said burst of gas.
103 . The system of claim 102 , wherein said source of thermal energy comprises a laser.
104 . The system of claim 99 , wherein said first plane and said second plane are different.
105 . The system of claim 99 , wherein said first plane and said second plane are in parallel.
106 . The system of claim 99 , wherein said first plane and said second plane are vertically offset from each other.Join the waitlist — get patent alerts
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