Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus

Abstract

A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer-sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.

1 - 18 . (canceled)  
     
     
         19 . A magnetoresistive head, comprising: 
 a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to an air-bearing surface, each magnetization direction of which first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium, wherein first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof; and    a first electrode electrically connected with the underlayer and a second electrode electrically connected with the protective layer, the first and second electrodes allowing a current to flow in a direction substantially perpendicular to the plane of the magnetoresistive film,    wherein the intermediate layer comprises an oxide layer.    
     
     
         20 . The magnetoresistive head according to  claim 19 , wherein the oxide layer is formed of at least one layer selected from the group consisting of an Al oxide, a Si oxide, a Fe oxide, a Cr oxide, a Ta oxide, a Ni oxide and a perovskite type oxide.  
     
     
         21 . The magnetoresistive head according to  claim 19 , wherein the oxide layer has a thickness of about 5 nm or less.