Domain epitaxy for thin film growth

Abstract

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T growth , said initial layer having a thickness h and annealing the initial layer of the film at a temperature T anneal , thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h c . The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

1 . A method of forming an epitaxial film on a substrate, comprising the steps of: 
 (a) growing an initial layer of a film on a substrate at a temperature T growth , said initial layer having a thickness h;    (b) annealing the initial layer of the film at a temperature T anneal , thereby substantially completely relaxing the initial layer.    
   
   
       2 . The method of  claim 1  further including growing additional layers of the film over the initial layer subsequent to annealing.  
   
   
       3 . The method of  claim 1  wherein said thickness h of the initial layer of the film is greater than a critical thickness h c .  
   
   
       4 . The method of  claim 1  wherein h between about 1 and about 5 monolayers.  
   
   
       5 . The method of  claim 1  wherein T growth  is about equal to T anneal .  
   
   
       6 . The method of  claim 1  wherein T growth  is less than T anneal .  
   
   
       7 . The method of  claim 1  wherein growth of the initial layer includes two-dimensional growth.  
   
   
       8 . The method of  claim 1  wherein the substrate includes Si(100) and the film includes TiN.  
   
   
       9 . The method of  claim 1  wherein the substrate includes Si(111) and the film includes at least one III-nitride selected from the group consisting of AlN, GaInN, and AlGaInN.  
   
   
       10 . The method of  claim 9  wherein the film includes AIN.  
   
   
       11 . The method of  claim 1  wherein the substrate includes Al 2 O 3 (0001) and wherein the film includes at least one member selected from the group consisting of ZnO, AlN, GaInN, and AlGaInN.  
   
   
       12 . The method of  claim 11  wherein the film includes ZnO.  
   
   
       13 . The method of  claim 2  further including the step of growing a layer of the film that includes at least one amorphous area.  
   
   
       14 . The method of  claim 14  wherein at least one amorphous area includes Si.  
   
   
       15 . The method of  claim 14  wherein at least one area of amorphous growth includes silicone nitride or silicone oxide.