Semiconductor damascene trench and methods thereof

Abstract

A method is provided for forming damascene gates and local interconnects a single process. By combining the formation of a damascene gate and local interconnect into a single process, a low cost solution is provided, having the advantages of low resistance wordlines and reduced gate length while reducing or eliminating the local interconnect to gate contact resistance. Further, the present invention provides flexible layout of active area to form small memory cells based upon the damascene gate and local interconnect structure. As such, the present invention is particularly suited for the fabrication of SRAM memory devices.

1 . A method of fabricating a semiconductor device comprising: 
 forming a first dielectric layer over said base substrate;    etching through said first dielectric layer to said base substrate to form a damascene trench in said first dielectric layer, said damascene trench having a gate area and a local interconnect area;    growing an oxide layer on said base substrate, said oxide layer within said gate area of said damascene trench defining a gate oxide layer;    forming a patterned mask over said semiconductor device, said patterned mask arranged to expose at least a portion of said oxide layer within said local interconnect area;    etching away the exposed portion of said oxide layer within said damascene trench;    providing at least one contact implant within a plug area in said base substrate, wherein said plug area is located at least partially beneath and in contact with said damascene local interconnect structure;    stripping said patterned mask from said semiconductor device;    depositing a conductive layer comprising a conductive material over said device such that said conductive material fills said damascene trench;    removing said first dielectric layer to define a damascene gate structure and a damascene local interconnect structure.    
   
   
       2 . The method of fabricating a semiconductor device of  claim 1 , further comprising: 
 depositing a spacer layer over said device; and    shaping said spacer layer to form spacers against the vertical walls of said damascene gate structure and said damascene interconnect structure.    
   
   
       3 . The method of fabricating a semiconductor device of  claim 1 , wherein said conductive material comprises a polysilicon material.  
   
   
       4 . The method of fabricating a semiconductor device of  claim 3 , further comprising: 
 forming a silicide layer over said polysilicon material within said gate area of said damascene trench.    
   
   
       5 . The method of fabricating a semiconductor device of  claim 3 , further comprising: 
 forming a silicide layer between said base substrate and said polysilicon within said local interconnect area of said damascene trench.    
   
   
       6 . The method of fabricating a semiconductor device of  claim 5 , further comprising: 
 removing said polysilicon material from said local interconnect area of said damascene trench;    forming said silicide layer within said local interconnect area; and    refilling said damascene trench with polysilicon.    
   
   
       7 . The method of fabricating a semiconductor device of  claim 1 , further comprising: 
 forming lightly doped drain regions in said base substrate adjacent and lateral to said damascene gate structure and said damascene local interconnect structure;    depositing a spacer layer over said device; and    anisotropically etching said spacer layer such that spacers are formed over the portions of said base substrate where said lightly doped drain regions are formed.    
   
   
       8 . The method of fabricating a semiconductor device of  claim 7 , further comprising: 
 forming doped regions in said base substrate after formation of said spacers such that said base substrate is doped more deeply adjacent and lateral to said spacers and said lightly doped drain regions underneath said spacers, wherein said lightly doped drain regions and said doped regions define doped source/drain regions.    
   
   
       9 . The method of fabricating a semiconductor device of  claim 1 , further comprising: 
 forming lightly doped drain regions in said base substrate adjacent and lateral to said damascene gate structure and said damascene local interconnect structure;    forming spacers against the vertical walls of said damascene gate structure and said damascene local interconnect structure; and    forming doped regions in said base substrate after formation of said spacers such that said base substrate is doped more deeply adjacent and lateral to said spacers and said lightly doped drain regions underneath said spacers, wherein said lightly doped drain regions and said doped regions define doped source/drain regions.    
   
   
       10 . The method of fabricating a semiconductor device of  claim 1 , further comprising: 
 forming an isolation trench in a base substrate before said first dielectric layer is formed.    
   
   
       11 . The method of fabricating a semiconductor device of  claim 10 , wherein at least a portion of said damascene trench is positioned to at least partially overlie said isolation trench.  
   
   
       12 . The method of fabricating a semiconductor device of  claim 1 , further comprising: 
 forming a first patterned mask over said first dielectric layer; and    etching through said first dielectric layer to said base substrate in areas defined by said first patterned mask to define said damascene trench in said first dielectric layer.    
   
   
       13 . The method of fabricating a semiconductor device of  claim 12 , further comprising: 
 stripping said first patterned mask from said first dielectric layer.    
   
   
       14 . The method of fabricating a semiconductor device of  claim 1 , further comprising: 
 forming a first patterned mask over said first dielectric layer;    etching through said first dielectric layer to said base substrate in areas defined by said first patterned mask to define said damascene trench in said first dielectric layer; and    stripping said first patterned mask from said first dielectric layer.    
   
   
       15 . A method of fabricating a semiconductor device comprising: 
 forming a first dielectric layer over said base substrate;    etching through said first dielectric layer to said base substrate to form a damascene trench in said first dielectric layer, said damascene trench having a gate area and a local interconnect area;    growing an oxide layer on said base substrate, said oxide layer within said gate area of said damascene trench defining a gate oxide layer;    forming a patterned mask over said semiconductor device, said patterned mask arranged to expose at least a portion of said oxide layer within said local interconnect area;    etching away the exposed portion of said oxide layer within said damascene trench;    providing at least one contact implant within a plug area in said base substrate, wherein said plug area is located at least partially beneath and in contact with said damascene local interconnect structure;    stripping said patterned mask from said semiconductor device;    depositing a conductive layer comprising a conductive material over said device such that said conductive material fills said damascene trench, wherein said conductive material comprises a polysilicon material;    removing said first dielectric layer to define a damascene gate structure and a damascene local interconnect structure.    
   
   
       16 . The method of fabricating a semiconductor device of  claim 15 , further comprising: 
 forming a silicide layer over said polysilicon material within said gate area of said damascene trench.    
   
   
       17 . The method of fabricating a semiconductor device of  claim 15 , further comprising: 
 forming a silicide layer between said base substrate and said polysilicon within said local interconnect area of said damascene trench.    
   
   
       18 . The method of fabricating a semiconductor device of  claim 17 , further comprising: 
 removing said polysilicon material from said local interconnect area of said damascene trench;    forming said silicide layer within said local interconnect area; and    refilling said damascene trench with polysilicon.    
   
   
       19 . A method of fabricating a semiconductor device comprising: 
 forming a first dielectric layer over said base substrate;    etching through said first dielectric layer to said base substrate to form a damascene trench in said first dielectric layer, said damascene trench having a gate area and a local interconnect area;    growing an oxide layer on said base substrate, said oxide layer within said gate area of said damascene trench defining a gate oxide layer;    forming a patterned mask over said semiconductor device, said patterned mask arranged to expose at least a portion of said oxide layer within said local interconnect area;    etching away the exposed portion of said oxide layer within said damascene trench;    providing at least one contact implant within a plug area in said base substrate, wherein said plug area is located at least partially beneath and in contact with said damascene local interconnect structure;    stripping said patterned mask from said semiconductor device;    depositing a conductive layer comprising a conductive material over said device such that said conductive material fills said damascene trench;    removing said first dielectric layer to define a damascene gate structure and a damascene local interconnect structure;    depositing a spacer layer over said device; and    shaping said spacer layer to form spacers against the vertical walls of said damascene gate structure and said damascene interconnect structure.    
   
   
       20 . The method of fabricating a semiconductor device of  claim 19 , further comprising: 
 forming lightly doped drain regions in said base substrate adjacent and lateral to said damascene gate structure and said damascene local interconnect structure; and    forming doped regions in said base substrate after formation of said spacers such that said base substrate is doped more deeply adjacent and lateral to said spacers and said lightly doped drain regions underneath said spacers, wherein said lightly doped drain regions and said doped regions define doped source/drain regions.