US2006138388A1PendingUtilityA1
Phosphor for light sources and associated light source
Est. expiryJul 23, 2019(expired)· nominal 20-yr term from priority
C09K 11/7715H05B 33/14C09K 11/7769C09K 11/7774H10H 20/8513H10H 20/8512C09K 11/77
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Claims
Abstract
A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A 3 B 5 O 12 . It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb 1-x-y RE x Ce y ) 3 (Al,Ga) 5 O 12 , where RE=Y, Gd, La and/or Lu; 0≦ x ≦0.5− y; 0<y< 0.1 is used.
Claims
exact text as granted — not AI-modified1 - 11 . (canceled)
12 . A process for producing an Al-containing Tb-garnet phosphor, a Ga-containing Tb-garnet phosphor, or a Ga,Al-containing Tb-garnet phosphor, the process comprising:
(a) intimately mixing an oxide of cerium, an oxide of terbium or terbium and at least one of Y, Gd, La, and/or Lu, at least one oxide of Al and Ga, and at least one flux to form a mixture; and (b) firing the mixture in forming gas to form the phosphor.
13 . The process of claim 12 wherein the flux is BaF 2 , HBO 3 , or both.
14 . The process of claim 12 wherein the forming gas is a mixture of nitrogen and hydrogen gases wherein the hydrogen is 2.3% by volume.
15 . The process of claim 12 wherein a stoichiometric excess of aluminum oxide is used to form the mixture.
16 . The process of claim 12 wherein the mixture is fired at a temperature from 1450° C. to 1550° C.
17 . The process of claim 12 wherein the mixture is milled after firing and then fired for a second time in forming gas.
18 . The process of claim 17 wherein the firings are performed at a temperature from 1450° C. to 1550° C.
19 . The process of claim 18 wherein the firings are each for three hours.Join the waitlist — get patent alerts
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