Light emitting device structure having nitride bulk single crystal layer

Abstract

The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.

1 . A light emitting device structure comprising an n-type nitride semiconductor layer, an active layer comprising an In-containing nitride semiconductor, and a p-type nitride semiconductor layer, formed on a substrate for growth, 
 wherein said light emitting device structure comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution formed on ternary or quaternary nitride layer in said nitride semiconductor layer.    
     
     
         2 . The light emitting device structure according to  claim 1 , wherein said substrate is a gallium-containing nitride bulk single crystal prepared by crystallization from supercritical ammonia-containing solution.  
     
     
         3 . The light emitting device structure according to  claim 1 , wherein said substrate has at least one plane selected from the group comprising A-plane, M-plane, R-plane, C-plane, {1-10n (n is a natural number)}, and {11-2m (m is a natural number)} of the gallium-containing nitride bulk single crystal, as its own surface.  
     
     
         4 . The light emitting device structure according to  claim 1 , wherein said substrate is not a substrate of nitride semiconductor.  
     
     
         5 . The light emitting device structure according to  claim 1 , wherein said substrate has dislocation density of 10 6 /cm 2  or less.  
     
     
         6 . The light emitting device structure according to  claim 1 , wherein said n-type nitride semiconductor layer is deposited on the substrate directly or through the Al x Ga 1-x N (0≦x≦1) buffer layer.  
     
     
         7 . The light emitting device structure according to  claim 1 , wherein said substrate is a composite substrate (template), which comprises gallium-containing nitride grown on a heterogeneous substrate by crystallization from supercritical ammonia-containing solution.  
     
     
         8 . The light emitting device structure comprising an n-type nitride semiconductor layer, an active layer comprising an In-containing nitride semiconductor, and a p-type nitride semiconductor layer, formed on a substrate for growth, 
 wherein said light emitting device structure comprises a single crystal Al x Ga 1-x N (0≦x≦1) layer doped with impurities prepared by crystallization from supercritical ammonia-containing solution.    
     
     
         9 . The light emitting device structure comprising an n-type nitride semiconductor layer, an active layer comprising an In-containing nitride semiconductor, and a p-type nitride semiconductor layer, formed on a substrate for growth, 
 wherein said light emitting device structure comprises a high-resistance single crystal Al x Ga 1-x N (0≦x≦1) layer prepared by crystallization from supercritical ammonia-containing solution as a current confinement layer.    
     
     
         10 . The light emitting device structure according to  claim 8 , wherein said active layer is a quantum well layer structure comprising at least one of InGaN well layer or InAlGaN well layer.  
     
     
         11 . The light emitting device structure according to  claim 1 , wherein said light emitting device structure is used for a semiconductor laser device and formed on A-plane or M-plane of the bulk single crystal gallium-containing nitride semiconductor substrate, and the light emitting surface of the resonator is M-plane of A-plane.