Copper interconnect

Abstract

An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

1 . An assembly comprising: 
 a semiconductor device having at least one bond pad including: 
 a copper layer base; and  
 at least two layers of metal, one layer comprising at least one layer of metal covering a portion of the copper layer base and at least one other layer of metal covering a portion of the at least one layer of metal, the at least one layer of metal comprising a noble metal alloy and the at least one other layer of metal comprising a nickel metal alloy; and  
   one end of a wire connected to the at least one layer of metal covering a portion of the copper layer base.    
     
     
         2 . An assembly comprising: 
 a semiconductor device having at least one bond pad located thereon including: 
 a copper layer base;  
 a barrier layer over at least a portion of the copper layer base; and  
 at least two layers of metal, one layer comprising at least one layer of metal covering a portion of the copper layer base and the barrier layer of the at least one bond pad and at least one other layer of metal covering a portion of the at least one layer of metal, the at least one layer of metal comprising a noble metal alloy and the at least one other layer of metal comprising a nickel metal alloy; and  
   one end of a wire connected to one layer of the at least two layers of metal covering a portion of the copper layer base.    
     
     
         3 . A semiconductor device assembly comprising: 
 a semiconductor device having an active surface with at least one bond pad located thereon, the 
 at least one bond pad including:  
 a copper layer base; and  
 at least two layers of metal, one layer comprising at least one layer of metal covering a portion of the copper layer base of the at least one bond pad and at least one other layer of metal covering a portion of the at least one layer of metal, the at least one layer of metal comprising a silver metal alloy and the at least one other layer of metal comprising a nickel metal alloy.  
   
     
     
         4 . A semiconductor device assembly comprising: 
 a semiconductor device having an active surface with at least one bond pad located thereon, the 
 at least one bond pad including:  
 a copper layer base; and  
 at least two layers of metal, one layer comprising at least one layer of metal covering a portion of the copper layer base of the at least one bond pad and at least one other layer of metal covering a portion of the at least one layer of metal, the at least one layer of metal comprising silver metal and the at least one other layer of metal comprising nickel metal.  
   
     
     
         5 . A semiconductor device assembly comprising: 
 a semiconductor device having an active surface with at least one bond pad located thereon, the 
 at least one bond pad including:  
 a copper layer base;  
 a barrier layer over at least a portion of the copper layer base; and  
 at least two layers of metal, one layer comprising at least one layer of metal covering a portion of the copper layer base and the barrier layer of the at least one bond pad and at least one other layer of metal covering a portion of the at least one layer of metal, the at least one layer of metal comprising a silver metal alloy and the at least one other layer of metal comprising a nickel metal alloy.  
   
     
     
         6 . A semiconductor device assembly comprising: 
 a semiconductor device having an active surface with at least one bond pad located thereon, the 
 at least one bond pad including:  
 a copper layer base;  
 a barrier layer over at least a portion of the copper layer base; and  
 at least two layers of metal, one layer comprising at least one layer of metal covering a portion of the copper layer base and the barrier layer of the at least one bond pad and at least one other layer of metal covering a portion of the at least one layer of metal, the at least one layer of metal comprising silver metal and the at least one other layer of metal comprising nickel metal.