Methods and systems for conditioning polishing pads

Abstract

Methods for conditioning polishing pads that are to be used in abrasive semiconductor substrate treatment processes, such as chemical-mechanical polishing or chemical-mechanical planarization processes, include abrading at least a portion of a polishing surface with a conditioner including abrasive elements formed from a material that is etchable selectively with respect to a material of the polishing pad. At least the conditioned portion of the polishing pad is exposed to at least one chemical to degrade or dissolve any residue or particles without substantially degrading or dissolving a material of the polishing pad. Systems that effect such methods include a conditioner, as well as a support for a polishing pad and at least one movement component for moving the support or a source of the at least one chemical.

1 . A method for conditioning a polishing pad, comprising: 
 providing a polishing pad including a polishing surface;    abrading at least a portion of the polishing surface with a conditioner having abrasive material that is etchable selectively with respect to a material of the polishing pad exposed at a conditioning surface of the conditioner; and    exposing at least the portion of the polishing surface to at least one chemical to remove particles of the abrasive material from at least the portion without substantially degrading or dissolving the material of the polishing pad.    
   
   
       2 . The method of  claim 1 , wherein abrading comprises abrading at least the portion of the polishing surface with the conditioner comprising an abrasive material including silicon dioxide.  
   
   
       3 . The method of  claim 2 , wherein abrading comprises abrading at least the portion of the polishing surface with the abrasive material being in the form of at least one of a particle and a structure protruding from a conditioning surface of the conditioner.  
   
   
       4 . The method of  claim 2 , wherein exposing comprises exposing at least the portion of the polishing surface to at least one chemical comprising at least one of hydrofluoric acid, sodium hydroxide, and potassium hydroxide.  
   
   
       5 . The method of  claim 1 , wherein abrading comprises abrading at least the portion of the polishing surface with the conditioner comprising an abrasive material including at least one of iron, an iron alloy, copper, nickel, and tungsten.  
   
   
       6 . The method of  claim 5 , wherein abrading comprises abrading at least the portion of the polishing surface with the abrasive material being in the form of at least one of a filament, a particle, and a structure protruding from a conditioning surface of the conditioner.  
   
   
       7 . The method of  claim 5 , wherein exposing comprises exposing at least the portion of the polishing surface to at least one chemical comprising hydrochloric acid.  
   
   
       8 . The method of  claim 1 , further comprising wearing away a conditioning surface of the conditioner to expose abrasive material.  
   
   
       9 . The method of  claim 8 , wherein wearing away is effected by contact of abrasive material that is released from the conditioner.  
   
   
       10 . The method of  claim 1 , wherein abrading is effected separate from polishing equipment.  
   
   
       11 . The method of  claim 1 , further comprising sonicating at least the at least one chemical as the polishing pad is exposed to the at least one chemical.  
   
   
       12 . A method for conditioning a polishing pad, comprising: 
 providing a polishing pad including a polishing surface;    abrading at least a portion of the polishing surface with a conditioner including abrasive material that is etchable selectively with respect to a material of the polishing pad and that is secured relative to a conditioning surface of the conditioner; and    exposing at least the portion of the polishing surface to at least one chemical to remove particles of the abrasive material from at least the portion without substantially degrading or dissolving the material of the polishing pad.    
   
   
       13 . A system for conditioning a polishing pad, comprising: 
 a polishing pad support;    a conditioner including: 
 a supporting substrate including a conditioning surface; and  
 a plurality of abrasive elements exposed at the conditioning surface, the plurality of abrasive elements comprising a material that is degradable or dissolvable by at least one chemical that does not substantially degrade or dissolve a material of a polishing pad to be conditioned with the plurality of abrasive elements,  
 the conditioner being positionable over the polishing pad support so as to place the conditioning surface in contact with a polishing pad disposed on the polishing pad support; and  
   at least one movement component configured to move at least one of the polishing pad support and the conditioner laterally relative to the other of the polishing pad support and the conditioner and a source of the at least one chemical.    
   
   
       14 . The system of  claim 13 , wherein the at least one movement component is configured to rotate one of the polishing pad support and the conditioner.  
   
   
       15 . The system of  claim 13 , wherein the at least one movement component is configured to laterally vibrate one of the polishing pad support and the conditioner.  
   
   
       16 . The system of  claim 13 , wherein the at least one movement component is configured to move one of the polishing pad support and the conditioner substantially linearly relative to the other of the polishing pad support and the conditioner.  
   
   
       17 . The system of  claim 13 , wherein the plurality of abrasive elements of the conditioner have a dimension of from about 25 μm to about 500 μm.  
   
   
       18 . The system of  claim 13 , wherein the plurality of abrasive elements of the conditioner comprise abrasive particles at least partially embedded within the supporting substrate of the conditioner.  
   
   
       19 . The system of  claim 18 , wherein the abrasive particles are at least partially embedded in the conditioning surface.  
   
   
       20 . The system of  claim 19 , further including abrasive particles that are completely embedded within the supporting substrate.  
   
   
       21 . The system of  claim 18 , wherein the supporting substrate of the conditioner comprises at least one of a polymer, a metal, a ceramic, paper, a paper-like compound, and a fabric.  
   
   
       22 . The system of  claim 13 , wherein the plurality of abrasive elements of the conditioner are located beneath the conditioning surface thereof.  
   
   
       23 . The system of  claim 13 , wherein the supporting substrate of the conditioner is substantially rigid.  
   
   
       24 . The system of  claim 23 , wherein the supporting substrate of the conditioner comprises at least one of a polymer, a metal, and a ceramic.  
   
   
       25 . The system of  claim 13 , wherein the supporting substrate of the conditioner is pliable.  
   
   
       26 . The system of  claim 25 , wherein the supporting substrate comprises at least one of paper, a paper-like compound, and fabric.  
   
   
       27 . The system of  claim 13 , wherein the plurality of abrasive elements of the conditioner comprise filaments.  
   
   
       28 . The system of  claim 13 , wherein the plurality of abrasive elements of the conditioner protrude from and are continuous with the conditioning surface thereof.  
   
   
       29 . The system of  claim 13 , wherein the plurality of abrasive elements and the supporting substrate of the conditioner comprise the same material.  
   
   
       30 . The system of  claim 29 , wherein the plurality of abrasive elements of the conditioner and at least the conditioning surface of the supporting substrate of the conditioner comprise the material that is degradable or dissolvable by at least one chemical that does not substantially degrade or dissolve a material of a polishing pad to be conditioned with the apparatus.  
   
   
       31 . The system of  claim 30 , wherein the material that is degradable or dissolvable by at least one chemical that does not substantially degrade or dissolve a material of a polishing pad to be conditioned comprises at least one of silicon dioxide, iron, an iron alloy, copper, nickel, and tungsten.  
   
   
       32 . The system of  claim 13 , wherein the at least one chemical comprises at least one of hydrofluoric acid, sodium hydroxide, potassium hydroxide, and hydrochloric acid.  
   
   
       33 . A system for conditioning a polishing pad, comprising: 
 a polishing pad support;    a conditioner including: 
 a supporting substrate including a conditioning surface; and  
 a plurality of abrasive elements secured relative to the conditioning surface, the plurality of abrasive elements comprising a material that is degradable or dissolvable by at least one chemical that does not substantially degrade or dissolve a material of a polishing pad to be conditioned with the plurality of abrasive elements,  
 the conditioner being positionable over the polishing pad support so as to place the conditioning surface in contact with a polishing pad disposed on the polishing pad support; and  
 at least one movement component configured to move at least one of the polishing pad support and the conditioner laterally relative to the other of the polishing pad support and the conditioner and a source of the at least one chemical.