Forming a substrate core with embedded capacitor and structures formed thereby

Abstract

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.

1 - 9 . (canceled)  
   
   
       10 . A method comprising: 
 forming a substrate core by: 
 attaching a first plurality of conductive pads disposed on a first thin film capacitor to a first side of a dielectric layer; and  
 attaching a second side of the dielectric layer to a second plurality of conductive pads disposed on a second thin film capacitor.  
   
   
   
       11 . The method of  claim 10  wherein the first thin film capacitor comprises a capacitor dielectric layer disposed between the first plurality of conductive pads and a first conductive layer.  
   
   
       12 . The method of  claim 11  wherein the capacitor dielectric layer comprises a dielectric constant greater then about 8.  
   
   
       13 . The method of  claim 10  wherein the dielectric layer comprises a prepreg layer disposed on a core material, wherein the core material comprises a first plurality of core pads disposed on a first side of the core material, and a second plurality of core pads disposed on a second side of the core material.  
   
   
       14 . The method of  claim 10  further comprising forming at least one opening through the substrate core.  
   
   
       15 - 28 . (canceled)