Double silver low-emissivity and solar control coatings

Abstract

A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag. Dividing the first layer of titanium oxide, the Ag layers, and/or the third layer with a sublayer of oxidized metal can provide greater thermal and mechanical stability to the respective layers.

1 - 22 . (canceled)  
     
     
         23 . A low-emissivity coating on a transparent substrate, the coating comprising, in numerical order outward from the substrate, 
 a first layer from 5 to 20 nm thick including a silicon nitride;    a second layer from 1 to 20 nm thick including a zinc oxide;    a third layer from 10 to 14 nm thick including Ag;    a fourth layer from 2 to 8 nm thick including a partially oxidized Ni—Cr alloy;    a fifth layer from 45 to 90 nm thick including a silicon nitride;    a sixth layer from 1 to 20 nm thick including a zinc oxide;    a seventh layer from 12 to 18 nm thick including Ag;    an eighth layer from 2 to 8 nm thick including a partially oxidized Ni—Cr alloy; and    a ninth layer from 25 to 60 nm thick including a silicon nitride.    
     
     
         24 . The coating according to  claim 23 , wherein the zinc oxide in at least one of the second layer and the sixth layer is from 6 to 7 nm thick.  
     
     
         25 . The coating according to  claim 23 , wherein the zinc oxide in at least one of the second layer and the sixth layer comprises nitrogen.  
     
     
         26 . The coating according to  claim 23 , wherein the Ag in the third layer is about 12 nm thick.  
     
     
         27 . The coating according to  claim 23 , wherein the Ag in the seventh layer is about 16 nm thick.  
     
     
         28 . The coating according to  claim 23 , wherein the Ag in at least one of the third layer and the seventh layer further includes at least one of oxygen and nitrogen.  
     
     
         29 . The coating according to  claim 28 , wherein the at least one of oxygen and nitrogen is distributed homogeneously throughout the Ag.  
     
     
         30 . The coating according to  claim 23 , wherein the Ag in at least one of the third layer and the seventh layer further includes a means for strengthening the Ag against thermally induced changes.  
     
     
         31 . The coating according to  claim 23 , wherein the partially oxidized Ni—Cr alloy in at least one of the fourth and the eighth layer is from 4 to 6 nm thick.  
     
     
         32 . The coating according to  claim 23 , wherein at least one layer of the first layer, the third layer, the fifth layer and the seventh layer is divided by a layer including a means for strengthening the at least one layer against thermally induced changes.  
     
     
         33 . The coating according to  claim 23 , wherein the fifth layer has an index of refraction greater than or equal to 1.9 at a wavelength of 550 nm.  
     
     
         34 . The coating according to  claim 23 , wherein the silicon nitride in the fifth layer is about 63 nm thick.  
     
     
         35 . The coating according to  claim 23 , wherein the silicon nitride in the ninth layer is about 35 nm thick.  
     
     
         36 . The coating according to  claim 23 , wherein 
 the first layer includes a layer comprising SiN x , where 0≦x≦1.34;    the fifth layer includes a layer comprising SiN x , where 0≦x≦1.34; and    the ninth layer includes a layer comprising SiN x , where 0≦x≦1.34.    
     
     
         37 . The coating according to  claim 36 , wherein the first layer includes a layer comprising SiN x , where x=1.34.  
     
     
         38 . A method of making a low-emissivity coating on a substrate, the method comprising 
 depositing at least one layer including Ag on the substrate; and    producing the coating of  claim 23 .    
     
     
         39 . The method according to  claim 38 , wherein the depositing comprises sputtering.  
     
     
         40 . A method of making a low-emissivity coating on a substrate, the method comprising 
 a step for depositing at least one layer including Ag on the substrate; and    producing the coating of  claim 23.