Photonic devices and PICs including sacrificial testing structures and method of making the same

Abstract

A testing structure formed on a photonic integrated circuit including a plurality of first photonic components and having a given functionality corresponding to a given interconnectivity of the first photonic components, the testing structure including: at least one second photonic component being suitable for testing at least one of the first photonic components; and, at least one photonic pathway optically coupling the at least one first photonic component to the at least one second photonic component. The at least one photonic pathway is unique from the given interconnectivity.

1 . A testing structure formed on a photonic integrated circuit including a plurality of first photonic components and having a given functionality corresponding to a given interconnectivity of said first photonic components, said testing structure comprising: 
 at least one second photonic component being suitable for testing at least one of said first photonic components; and,    at least one photonic pathway optically coupling said at least one first photonic component to said at least one second photonic component;    wherein, said at least one photonic pathway is unique from said given interconnectivity.    
   
   
       2 . The testing structure of  claim 1 , wherein said photonic pathway comprises an integrated waveguide.  
   
   
       3 . The testing structure of  claim 2 , wherein said waveguide comprises at least one amorphous silicon based alloy material.  
   
   
       4 . The testing structure of  claim 3 , wherein said amorphous silicon based alloy material is plasma enhanced chemical vapor deposited.  
   
   
       5 . The testing structure of  claim 4 , wherein said amorphous silicon based alloy material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.  
   
   
       6 . The testing structure of  claim 4 , wherein said amorphous silicon based alloy material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiC x  where 0<x<1, a-SiN y  where 0<y<1.33, a-SiO z  where 0<z<2 and a-SiGe w  where 0<w<1.  
   
   
       7 . The testing structure of  claim 1 , wherein said at least one photonic pathway is adapted to be removable without adversely affecting said first photonic components.  
   
   
       8 . The testing structure of  claim 1 , wherein said first photonic components comprise at least one type III-V semiconductor compound photonic component.  
   
   
       9 . The testing structure of  claim 8 , wherein said at least one second photonic component comprises at least one type III-V semiconductor compound photonic component.  
   
   
       10 . The testing structure of  claim 1 , wherein said at least one second photonic device comprises a plurality of second photonic devices each corresponding to one of said first photonic devices and said at least one photonic pathway comprises a corresponding plurality of photonic pathways.