Semiconductor layer and forming method thereof, and semiconductor device and manufacturing method thereof technical field

Abstract

The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof, for example. The semiconductor layer and the forming method thereof according to the present invention includes a first SiGe film or SiGeC film containing Ge of which the concentration become equal to a thermal expansion coefficient of silicon oxide and a second SiGe film or SiGeC film formed on the first film. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer. Thus, a stress that is caused by a difference between the thermal expansion coefficients becomes difficult to occur in the laminated film, and hence the occurrence of misfit dislocation can be suppressed. Thus, the present invention is suitable as the application to a hetero-junction bipolar transistor.

1 - 12 . (canceled)  
   
   
       13 . A semiconductor device comprising an insulating film provided on a substrate, a first layer interconnected to said substrate through an opening formed on said insulating film and a second layer formed on said first layer, wherein said first layer is formed so as to contact with said insulating film and said substrate, said first layer has a thermal expansion coefficient substantially the same as that of said insulating film and said second layer has a thermal expansion coefficient different from that of said first layer.  
   
   
       14 . A semiconductor device according to  claim 13 , wherein said first layer includes at least Ge and said second layer includes Ge and C.  
   
   
       15 . A semiconductor device according to  claim 13 , wherein said first layer is made of SiGe and said second layer is made of SiGeC.  
   
   
       16 . A semiconductor device according to  claim 13 , wherein said first layer is made of SiGeC and said second layer is made of SiGeC of which the Ge concentration is different from that of said SiGeC.  
   
   
       17 . A semiconductor device according to  claim 13 , wherein said first layer is made of SiGe and said second layer is made of SiGe of which the Ge concentration is different from that of said SiGe.  
   
   
       18 . A semiconductor device according to  claim 13 , wherein said second layer contains N-type or P-type impurities.  
   
   
       19 . A semiconductor device according to  claim 14 , wherein said Ge concentration in said first layer is made constant in the layer thickness direction in a range of from 4 to 10 atomic %.  
   
   
       20 . A semiconductor device according to  claim 15 , wherein said Ge concentration in said first layer is made constant in the layer thickness direction in a range of from 4 to 10 atomic %.  
   
   
       21 . A semiconductor device according to  claim 16 , wherein said Ge concentration in said first layer is made constant in the layer thickness direction in a range of from 4 to 10 atomic %.  
   
   
       22 . A semiconductor device according to  claim 17 , wherein said Ge concentration in said first layer is made constant in the layer thickness direction in a range of from 4 to 10 atomic %.  
   
   
       23 . A semiconductor device manufacturing method comprising: 
 forming an insulating film on a substrate;    forming an opening on said insulating film;    forming a first semiconductor film with substantially the same thermal expansion coefficient as that of said insulating film on said opening and a process for forming a second semiconductor film with a thermal expansion coefficient different from that of said first semiconductor film on said first semiconductor film.    
   
   
       24 . A semiconductor device manufacturing method according to  claim 23 , wherein said first semiconductor film includes at least Ge and said second semiconductor film includes Ge and C.  
   
   
       25 . A semiconductor device manufacturing method according to  claim 23 , wherein said first semiconductor film is made of SiGe and said second semiconductor film is made of SiGeC.  
   
   
       26 . A semiconductor device manufacturing method according to  claim 23 , wherein said first semiconductor film is made of SiGeC and said second semiconductor film is made of SiGeC of which the Ge concentration is different from that of said SiGeC.  
   
   
       27 . A semiconductor device manufacturing method according to  claim 23 , wherein said first semiconductor film is made of SiGe and said second semiconductor film is made of SiGe of which the Ge concentration is different from that of said SiGe.  
   
   
       28 . A semiconductor device manufacturing method according to  claim 24 , wherein said Ge concentration in said first semiconductor film is made constant in the film thickness direction in a range of from 4 to 10 atomic %.  
   
   
       29 . A semiconductor device manufacturing method according to  claim 25 , wherein said Ge concentration in said first semiconductor film is made constant in the film thickness direction in a range of from 4 to 10 atomic %.  
   
   
       30 . A semiconductor device manufacturing method according to  claim 26 , wherein said Ge concentration in said first semiconductor film is made constant in the film thickness direction in a range of from 4 to 10 atomic %.  
   
   
       31 . A semiconductor device manufacturing method according to  claim 27 , wherein said Ge concentration in said first semiconductor film is made constant in the film thickness direction in a range of from 4 to 10 atomic %.  
   
   
       32 . A semiconductor device manufacturing method according to  claim 23 , further comprising a process for forming a base layer by patterning a laminated film including said first and second semiconductor films and into which base impurities are introduced and a process for forming an emitter region within said base layer.  
   
   
       33 - 42 . (canceled)