US2006175717A1PendingUtilityA1

Semiconductor device and method of making the same

Assignee: ROHM CO LTDPriority: Oct 23, 2000Filed: Apr 7, 2006Published: Aug 10, 2006
Est. expiryOct 23, 2020(expired)· nominal 20-yr term from priority
Inventors:Yasumasa Kasuya
H10W 72/5522H10W 74/00H10W 72/0198H10W 72/5449H10W 90/756H10W 70/411
47
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Claims

Abstract

A semiconductor device and a method of making a semiconductor device are provided, wherein the device includes a die-pad, a semiconductor chip and a sealing resin. The die-pad has a first surface and a second surface opposite to the first surface. The second surface includes an exposed portion and a retreated portion around the exposed portion. The semiconductor chip is mounted on the first surface of the die-pad. The sealing resin covers the die-pad and the semiconductor chip, exposes the exposed portion, and is held in contact with the retreated portion.

Claims

exact text as granted — not AI-modified
1 - 10 . (canceled)  
     
     
         11 . A method of making a semiconductor device comprising the steps of: 
 punching a conductive frame to form a die-pad with a slit, the die-pad including an upper surface and a lower surface opposite to the upper surface, the slit extending through the die-pad at a location adjacent to a peripheral edge of the die-pad;    etching the lower surface along the peripheral edge of the die-pad so as to form a thin-walled portion in the die-pad in a manner such that the slit is opened at the thin-walled portion;    mounting a semiconductor chip on the upper surface of the die-pad;    bonding a wire to the semiconductor chip and to the die-pad; and    sealing the semiconductor chip with a sealing resin in a manner such that the lower surface of the die-pad is exposed.    
     
     
         12 . The method according to  claim 11 , wherein the thin-walled portion is defined by a retreated surface.  
     
     
         13 . The method according to  claim 11 , wherein the sealing resin extends under the thin-walled portion so as not to expose an opening of the slit.  
     
     
         14 . The method according to  claim 11 , wherein the slit extends along a side surface of the semiconductor chip around the semiconductor chip.  
     
     
         15 . The method according to  claim 11 , wherein the wire is connected at one end thereof to the semiconductor chip and connected at another end thereof to the die-pad at a portion between a peripheral edge of the die-pad and the slit.

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