Apparatus and methods for cooling semiconductor integrated circuit chip packages

Abstract

Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.

1 . An electronic module, comprising: 
 a first carrier substrate;    a second carrier substrate formed of silicon, which is bonded to the first carrier substrate;    a plurality of IC (integrated circuit) chips flip-chip bonded to the second carrier substrate;    a microchannel cooling device formed of silicon, the microchannel cooling device comprising a first surface that is thermally bonded to a non active surface of each of the IC chips, the microchannel cooling device having a plurality of coolant inlet and outlet manifolds formed in a second surface opposite the first surface;    a package cap attached to the second surface of the microchannel cooling device using a flexible seal, the package cap comprising fluid distribution manifolds that are aligned to corresponding inlet and outlet manifolds of the microchannel cooling device.    
   
   
       2 . The electronic module of  claim 1 , wherein the first carrier substrate comprises a ceramic package substrate.  
   
   
       3 . The electronic module of  claim 1 , wherein the second carrier substrate has a thickness of less than about 0.5 mm, and wherein the second carrier substrate comprises electrical through vias.  
   
   
       4 . The electronic module of  claim 1 , wherein the second carrier substrate has a thickness in a range of about 50 microns to about 200 microns, and wherein the second carrier substrate comprises electrical through vias.  
   
   
       5 . The electronic module of  claim 1 , wherein a pitch of the electrical interconnections between the second carrier substrate and the IC chips is less than or equal to about 300 microns and more preferably less than about 100 microns.  
   
   
       6 . The electronic module of  claim 1 , wherein the first surface of the microchannel cooling device is thermally bonded to the non-active surface of each of the IC chips using rigid bonding material.  
   
   
       7 . The electronic module of  claim 6 , wherein the rigid bonding material comprises solder, metal, silver filled epoxy, or a filled polymer material.  
   
   
       8 . The electronic module of  claim 1 , wherein the non-active surface of one or more of the IC chips mounted on the second carrier substrate is planarized prior to being bonded to the microchannel cooling device.  
   
   
       9 . The electronic module of  claim 7 , wherein a thickness of rigid bonding material between the non-active surface of the chips and the first surface of the microchannel cooling device is varied for different chips in accordance with a thermal resistance required for the IC chips.