Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces

Abstract

Methods for forming microelectronic workpieces used in electrochemical deposition processes, methods of depositing a conductive layer on a microelectronic workpiece, and articles for electrochemical deposition in semiconductor fabrication. One aspect of the invention is directed toward methods for forming microelectronic workpieces that are well-suited for electrochemical deposition processes. On embodiment of such a method comprises depositing a first conductive material on a workpiece to form an electrically conductive first layer that conforms to the workpiece. This embodiment further includes forming a seed region defined by a second layer of a second conductive material on the first layer, and forming a contact region defined by an exposed portion of the first layer that is not covered by the second layer. The contact region can extend around at least a portion of the perimeter of the workpiece.

1 - 45 . (canceled)  
   
   
       46 . An article for electrochemical deposition of a conductive layer on a workpiece in the fabrication of microelectronic circuits using a workpiece holder having contacts with contact points arranged to circumscribe a circle, comprising: 
 a workpiece having a plurality of submicron micro-components that define integrated circuits;    a first layer on the workpiece, the first layer being composed of a first electrically conductive material, and the first layer covering an area of the workpiece having a first diameter greater than a diameter of the circle circumscribed by the contact points;    a second layer over the first layer to define a seed layer, the second layer being composed of a second conductive material different than the first material, and the second layer covering an area of the workpiece having a second diameter less than the first diameter such that a portion of the first layer along a perimeter edge of the workpiece is exposed, and wherein the second diameter is less than the diameter of the circle circumscribed by the contact points.    
   
   
       47 . The article of  claim 46  wherein: 
 the first layer comprises a barrier layer that inhibits migration of copper; and    the second layer comprises copper.    
   
   
       48 . The article of  claim 47  wherein the exposed portion of the first layer comprises a band around the perimeter of the workpiece having a width of approximately 1-10 mm.  
   
   
       49 . The article of  claim 47  wherein the exposed portion of the first layer comprises a band around the perimeter of the workpiece having a width of approximately 2-5 mm.  
   
   
       50 . The article of  claim 46  wherein the exposed portion of the first layer has a width extending radially inwardly from a perimeter of the workpiece for a distance of approximately 1-10 mm along at least a portion of the workpiece.  
   
   
       51 . The article of  claim 50  wherein the exposed portion of the first layer comprises a band extend completely around the workpiece.  
   
   
       52 . The article of  claim 50  wherein the exposed portion of the first layer comprises an arc extending only around a portion of the workpiece.  
   
   
       53 . An article for electrochemical deposition of a conductive layer on a workpiece in the fabrication of microelectronic circuits using a workpiece holder having contacts with contact points arranged to circumscribe a circle, comprising: 
 a workpiece having a plurality of submicron micro-components that define integrated circuits;    a barrier layer on the workpiece, the barrier layer being composed of a first electrically conductive material that covers an area of the workpiece having a first diameter greater than a diameter of the circle circumscribed by the contact points;    a seed layer over the barrier layer, the seed layer being composed of a second conductive material different than the first material, and the seed layer covering an area of the workpiece having a second diameter less than the first diameter such that a portion of the barrier layer is exposed along a perimeter edge of the workpiece, and wherein the second diameter is less than the diameter of the circle circumscribed by the contact points.    
   
   
       54 . The article of  claim 53  wherein: 
 the first layer comprises a barrier layer that inhibits migration of copper; and    the second layer comprises copper.    
   
   
       55 . The article of  claim 54  wherein the exposed portion of the first layer comprises a band around the perimeter of the workpiece having a width of approximately 1-10 mm.  
   
   
       56 . The article of  claim 54  wherein the exposed portion of the first layer comprises a band around the perimeter of the workpiece having a width of approximately 2-5 mm.  
   
   
       57 . The article of  claim 53  wherein the exposed portion of the first layer has a width extending radially inwardly from a perimeter of the workpiece for a distance of approximately 1-10 mm along at least a portion of the workpiece.  
   
   
       58 . The article of  claim 57  wherein the exposed portion of the first layer comprises a band extend completely around the workpiece.  
   
   
       59 . The article of  claim 57  wherein the exposed portion of the first layer comprises an arc extending only around a portion of the workpiece.  
   
   
       60 . An article for electrochemical deposition of a conductive layer on a workpiece in the fabrication of microelectronic circuits using a workpiece holder having contacts with contact points arranged to circumscribe a circle, comprising: 
 a workpiece having a plurality of submicron micro-components that define integrated circuits;    a barrier layer on the workpiece, the barrier layer being composed of a first electrically conductive material; and    a seed layer composed of a second conductive material different than the first material, wherein the seed layer covers only a portion of the barrier layer to leave an exposed portion of the barrier layer along a perimeter edge of the workpiece, wherein the exposed portion is configured to contact the contact points and the contact points are configured to apply an electrical current directly to the barrier layer.    
   
   
       61 . The article of  claim 46  wherein the workpiece holder further includes an annular rim configured to engage the workpiece, and wherein the second diameter is approximately equal to a diameter of the rim.  
   
   
       62 . The article of  claim 46  wherein the exposed area of the first layer is configured to contact the contact points.  
   
   
       63 . The article of  claim 53  wherein the workpiece holder further includes an annular rim configured to engage the workpiece, and wherein the second diameter is approximately equal to a diameter of the rim.  
   
   
       64 . The article of  claim 53  wherein the exposed area of the barrier layer is configured to contact the contact points.