Method of optimized stitching for digital micro-mirror device

Abstract

A method of providing a reticle layout for a die having at least three patterns, namely a right pattern, a center pattern, and a left pattern, where the center pattern is oversized relative to the photolithography step size. To avoid the non-uniformity effects resulting from stitching the center pattern, the center pattern size is minimized. This is accomplished by moving portions of the center pattern to the left and right patterns.

1 - 10 . (canceled)  
   
   
       11 . At least three photolithographic reticles for patterning a semiconductor substrate with a composite image, said photolithographic reticles comprising: 
 a first reticle providing an image for a first perimeter portion of said composite image;    a second reticle providing an image for a second perimeter portion of said composite image; and    at least one central reticle providing an image for a central portion of said composite image, said central portion of said composite image having a smaller area than at least one of said first perimeter and said second perimeter portions.    
   
   
       12 . The reticles of  claim 11 , said first perimeter portion of said composite image being larger than all other said portions.  
   
   
       13 . The reticles of  claim 11 , said first perimeter portion and said second perimeter portion being larger than all other said portions.  
   
   
       14 . The reticles of  claim 11 , said reticles designed for use on a stepper and wherein at least one of said first and said second reticles provides substantially the largest image said stepper supports.