Semiconductor light emitting device, method of manufacturing same, and optical module

Abstract

A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga 1-x In x N y As 1-y-z Sb z mixed crystal (0≦x<1, 0<y<1, 0≦z<1, and 0<y+z<1) and a barrier layer made of a GaN v As 1-v mixed crystal (0≦v<1) are layered. The impurity concentration of hydrogen in the active layer is 3×10 19 cm −3 or less, and the impurity concentration of aluminum in the active layer is 1×10 18 cm −3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized. The hydrogen concentration can be decreased by decreasing the flow rate of the organic nitrogen compound used as a raw material of nitrogen when the active layer is grown.

1 . A semiconductor light emitting device in which an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), 
 wherein impurity concentration of hydrogen (H) in the active layer is 3×10 19  cm −3  or less, and the impurity concentration of aluminum (Al) in the active layer is 1×10 18  cm −3  or less, or    the impurity concentration of hydrogen in the active layer is 1.5×10 18  cm −3  or less, and the impurity concentration of aluminum in the active layer is 4×10 18  cm −3  or less.    
     
     
         2 . The semiconductor light emitting device according to  claim 1 , wherein the active layer has a single quantum well structure or a multiquantum well structure including a well layer made of a Ga 1-x In x N y As 1-y-z Sb z  mixed crystal (0≦x<1, 0<y<1, 0≦z<1, and 0<y+z<1).  
     
     
         3 . The semiconductor light emitting device according to  claim 1 , wherein the active layer has a multiquantum well structure including well layers and barrier layers, and the thickness per one layer of the barrier layer is in the range from 1 nm to 8 nm.  
     
     
         4 . A method of manufacturing a semiconductor light emitting device, in which an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), 
 wherein an organic nitrogen compound is used as a raw material of nitrogen when forming the active layer, the flow rate of the organic nitrogen compound is 135 cm 3 /min or less, and thereby the impurity concentration of hydrogen (H) in the active layer becomes 3×10 19  cm −3  or less.    
     
     
         5 . The method of manufacturing a semiconductor light emitting device according to  claim 4 , wherein as a raw material of nitrogen, at least one from the group consisting of dimethyl hydrazine, monomethyl hydrazine, and tertiary butyl hydrazine is used.  
     
     
         6 . The method of manufacturing a semiconductor light emitting device according to  claim 4 , wherein before forming the active layer, gas reactive with aluminum is flowed, and thereby the impurity concentration of aluminum (Al) in the active layer becomes 1×10 18  cm −3  or less.  
     
     
         7 . The method of manufacturing a semiconductor light emitting device according to  claim 6 , wherein as gas reactive with aluminum, at least one from the group consisting of dimethyl hydrazine, ammonia, and nitrogen radical is used.  
     
     
         8 . A method of manufacturing a semiconductor light emitting device according to  claim 6 , wherein the gas reactive to aluminum is supplied together with a raw material of a Group 15 element in a state that supply of a raw material of a Group 13 element is stopped.  
     
     
         9 . An optical module comprising a semiconductor light emitting device, 
 wherein in the semiconductor light emitting device, an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N),    the impurity concentration of hydrogen (H) in the active layer is 3×10 19  cm −3  or less, and the impurity concentration of aluminum (Al) in the active layer is 1×10 18  cm −3  or less, or    the impurity concentration of hydrogen in the active layer is 1.5×10 18  cm −3  or less, and the impurity concentration of aluminum in the active layer is 4×10 18  cm −3  or less.