US2006187994A1PendingUtilityA1
Light-emitting apparatus, phosphor, and method of producing it
Est. expiryAug 23, 2022(expired)· nominal 20-yr term from priority
Inventors:Masaya IshidaTatsuya MoriokaDaisuke HanaokaMototaka TaneyaShigeo FujitaYoichi KawakamiMasafumi HaradaTakatomo SasakiYusuke Mori
C09K 11/0883H10H 20/8512B82Y 20/00H01S 5/0087H01S 5/0078H01S 5/0225H01S 5/22H01S 5/32341H01S 5/02251H01S 5/34333Y10S977/783Y10S977/816H01S 5/02257Y10S977/815C09K 11/62
53
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Abstract
A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm 3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
Claims
exact text as granted — not AI-modified1 - 20 . (canceled)
21 . A phosphor comprising:
fine-particle crystals of a III-V group compound semiconductor, wherein the fine-particle crystals each have a volume of 2800 nm 3 or less.
22 . A method of producing a phosphor, comprising the step of producing, from materials containing a III group element and a V group element and through chemical synthesis, a phosphor formed of a III-V group compound semiconductor in a form of fine-particle crystals each having a volume of 2800 nm 3 or less.
23 . A method of producing a phosphor, comprising the step of
producing, by using a III-V group compound semiconductor as a material and by laser ablation, a phosphor formed of fine-particle crystals each having a volume of 2800 nm 3 or less.
24 . A phosphor comprising:
fine-particle crystals of a III-V group compound semiconductor, wherein the fine-particle crystals each measure 14 nm or less in two directions perpendicular to a longest side thereof.
25 . A method of producing a phosphor, comprising the step of
producing, from materials containing a III group element and a V group element and through chemical synthesis, a phosphor formed of a III-V group compound semiconductor in a form of fine-particle crystals each measuring 14 nm or less in two directions perpendicular to a longest side thereof.
26 . A method of producing a phosphor, comprising the step of
producing, by using a Ill-V group compound semiconductor as a material and by laser ablation, a phosphor formed of fine-particle crystals each measuring 14 nm or less in two directions perpendicular to a longest side thereof.Cited by (0)
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