Pressurized reactor for thin film deposition

Abstract

An apparatus is provided for use with thin film deposition to permit sequential deposition of discrete conformal layers onto a substrate situated within the apparatus. The apparatus includes a chamber and an outlet in substantial alignment therewith. The chamber includes an inlet to permit introduction of a pressurized gas into the chamber, and a platform on which a substrate may be placed for thin film deposition. The outlet provides an exit through which the substrate may be removed from within the chamber. The apparatus also includes a gate position within the chamber adjacent the outlet for moving between an open position and a closed position relative to the outlet. In the presence of pressurized gas within the chamber, the gate may be pushed against the outlet to provide a substantially pressure tight seal thereat.

1 . An apparatus for use in thin film deposition, the apparatus comprising: 
 a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate;    an outlet in substantial alignment with the chamber and through which the substrate can be removed; and    a biasing gate positioned within the chamber adjacent the outlet for engaging the outlet to minimize outflow of pressure and gas from within the chamber.    
     
     
         2 . An apparatus as set forth in  claim 1 , wherein the chamber includes an inlet through which the pressurized gas can be introduced.  
     
     
         3 . An apparatus as set forth in  claim 1 , wherein the chamber includes a platform on which the substrate can be placed.  
     
     
         4 . An apparatus as set forth in  claim 1 , wherein the platform includes a heating element to permit heating of the platform to a desired temperature to control deposition rate onto the substrate.  
     
     
         5 . An apparatus as set forth in  claim 1 , wherein the biasing gate includes a head for engagement with the outlet, and an elongated shaft extending therefrom.  
     
     
         6 . An apparatus as set forth in  claim 5 , wherein the shaft is connected, at an end opposite to that attached to the head, to a biasing device capable of moving the gate between a closed position, where the head engages the outlet, and an open position, where the head is situated away from the outlet.  
     
     
         7 . An apparatus as set forth in  claim 5 , wherein the gate includes a collapsible membrane situated circumferentially about the shaft to minimize introduction of contaminants across a juncture where the shaft is connected to the biasing device.  
     
     
         8 . An apparatus as set forth in  claim 7 , wherein the collapsible membrane includes a vent extending from within the membrane through the head of the gate to permit air or pressure from within the membrane to exit, so as to minimize an occurrence of rupture within the membrane when it is collapsed.  
     
     
         9 . An apparatus as set forth in  claim 8 , wherein the vent includes a filter to prevent any contaminants present within the bellow from entering into the chamber of the apparatus.  
     
     
         10 . An apparatus as set forth in  claim 5 , wherein the gate includes a seal positioned on the head of the gate along a surface adjacent the outlet to provide a pressure tight engagement with the outlet.  
     
     
         11 . An apparatus as set forth in  claim 5 , wherein the outlet and the head of the gate include complementary sloping angles to facilitate ease of engagement between the head and the outlet.  
     
     
         12 . An apparatus as set forth in  claim 1 , wherein the chamber and the outlet are positioned within separate components of the apparatus.  
     
     
         13 . An apparatus as set forth in  claim 1 , wherein the chamber and the outlet are positioned within an integral component comprising the apparatus.  
     
     
         14 . A reactor for use in thin film deposition, the reactor comprising: 
 a processing module having a chamber within which a substrate can be placed for thin film deposition;    an exit portion coupled to the processing module for providing a substantially pressure tight environment within a pressurized gas can be accommodated;    an outlet on the exit portion through which the substrate can be removed; and    a biasing gate positioned within the exit portion and adjacent the outlet for engaging the outlet to minimize outflow of pressure and gas from within the chamber.    
     
     
         15 . A reactor as set forth in  claim 14 , wherein the processing module includes an inlet through which the pressurized gas can be introduced into the chamber.  
     
     
         16 . A reactor as set forth in  claim 14 , wherein the processing module includes a platform on which the substrate can be placed.  
     
     
         17 . A reactor as set forth in  claim 14 , wherein the platform includes a heating element to permit heating of the platform to a desired temperature to control deposition rate onto the substrate.  
     
     
         18 . A reactor as set forth in  claim 17 , wherein the processing module includes a feedback controller to control the temperature of the heating element.  
     
     
         19 . A reactor as set forth in  claim 14 , wherein the exit portion includes a cavity in substantially alignment with the chamber and the outlet to provide a pathway along which the substrate can be removed from the chamber.  
     
     
         20 . A reactor as set forth in  claim 14 , wherein the exit portion includes a recess within which the biasing gate can be positioned.  
     
     
         21 . A reactor as set forth in  claim 14 , wherein the biasing gate includes a head for engagement with the outlet and an elongated shaft extending therefrom.  
     
     
         22 . A reactor as set forth in  claim 21 , wherein the shaft is connected, at an end opposite to that attached to the head, to a biasing device capable of moving the gate between a closed position, where the head engages the outlet, and an open position, where the head is situated away from the outlet.  
     
     
         23 . A reactor as set forth in  claim 21 , wherein the gate includes a substantially collapsible membrane situated circumferentially about the shaft to minimize introduction of contaminants across a juncture where the shaft is connected to the biasing device.  
     
     
         24 . A reactor as set forth in  claim 23 , wherein the collapsible membrane is attached at one end to a seal positioned at the juncture to further minimize introduction of contaminants across the juncture.  
     
     
         25 . A reactor as set forth in  claim 23 , wherein the collapsible membrane includes a vent extending from within the membrane through the head of the gate to permit air from within the membrane to exit, so as to minimize an occurrence of rupture within the membrane when it is collapsed.  
     
     
         26 . A reactor as set forth in  claim 25 , wherein the vent includes a filter to prevent any contaminants present within the bellow from entering into the chamber of the apparatus.  
     
     
         27 . A reactor as set forth in  claim 21 , wherein the gate includes a seal positioned on the head of the gate along a surface adjacent the outlet to provide a pressure tight engagement with the outlet.  
     
     
         28 . A reactor as set forth in  claim 27 , wherein the seal includes one of an O-Ring seal or a U-Shape seal capable of being deformed to provide a pressure tight engagement with the outlet.  
     
     
         29 . A reactor as set forth in  claim 21 , wherein the outlet and the head of the gate include complementary sloping angles to facilitate ease of engagement between the head and the outlet.  
     
     
         30 . A reactor as set forth in  claim 14 , wherein the exit portion is designed to engage a cluster handler to minimize contamination of the substrate during removal of the substrate from the chamber of the reactor.  
     
     
         31 . A method for depositing a thin film onto a substrate, the method comprising: 
 providing an apparatus having a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate, an outlet in substantial alignment with the chamber and through which a substrate can be removed, and a biasing gate positioned within the chamber adjacent the outlet for engaging the outlet to minimize outflow of pressure and gas therefrom;    placing a substrate within the chamber;    advancing the gate to a closed position, such that the gate engages the outlet;    injecting into the chamber a mixture of a pressurized gas and a material for deposition onto the substrate; and    allowing a thin film to be formed on the substrate from the mixture.    
     
     
         32 . A method as set forth in  claim 31 , wherein the step of providing includes placing the apparatus within a closed environment in order to minimize subsequent occurrence of contamination to the substrate.  
     
     
         33 . A method as set forth in  claim 31 , wherein the step of placing includes moving the substrate across the outlet into the chamber.  
     
     
         34 . A method as set forth in  claim 31 , wherein the step of injecting includes permitting pressure from the mixture to push the gate against the outlet, so as to provide a substantially pressure tight engagement between the gate and the outlet.  
     
     
         35 . A method as set forth in  claim 31 , wherein the step of allowing includes heating the substrate to control a deposition rate of the thin film onto the substrate.  
     
     
         36 . A method as set forth in  claim 31 , further including: 
 moving the gate to an open position, such that the gate provides access to the substrate within the chamber through the outlet.    
     
     
         37 . A method as set forth in  claim 36 , wherein the step of moving includes depressurizing the chamber to a transfer pressure.  
     
     
         38 . A method as set forth in  claim 36 , further including: 
 removing, through the outlet, the substrate from within the chamber.    
     
     
         39 . A method for depositing a thin film onto a substrate, the method comprising: 
 providing a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate;    placing a substrate into the chamber through an outlet thereof;    blocking the outlet from within the chamber to minimize outflow of pressure and gas therefrom;    injecting into the chamber a mixture of a pressurized gas and a material for deposition onto the substrate; and    allowing a thin film to be formed on the substrate from the mixture.    
     
     
         40 . A method as set forth in  claim 39 , wherein the step of providing includes connecting the chamber to a closed environment in order to minimize subsequent occurrence of contamination to the substrate.  
     
     
         41 . A method as set forth in  claim 39 , wherein the step of injecting includes permitting pressure from the mixture to further act on the blocking of the outlet, so as to provide a substantially pressure tight engagement thereat.  
     
     
         42 . A method as set forth in  claim 39 , wherein the step of allowing includes heating the substrate to control a deposition rate of the thin film onto the substrate.  
     
     
         43 . A method as set forth in  claim 31 , further including: 
 unblocking the outlet so as to provide, through the outlet, access to the substrate within the chamber.    
     
     
         44 . A method as set forth in  claim 43 , wherein the step of unblocking includes depressurizing the chamber to a transfer pressure.  
     
     
         45 . A method as set forth in  claim 43 , further including: 
 removing, through the outlet, the substrate from within the chamber.