Fabrication of parascan tunable dielectric chips

Abstract

An embodiment of the present invention provides a method, comprising fabricating a tunable dielectric chip by defining a critical area on a dielectric material via patterning and metallization and encapsulating said critical area.

1 . A method of fabricating tunable dielectric chips, comprising the steps of: 
 (a) defining a critical area on a thick film tunable dielectric via patterning and metallization; and    (b) encapsulating said critical area in order to protect the critical area from moisture and other contaminations    
   
   
       2 . The method of fabricating tunable dielectric chips of  claim 1 , wherein step (a), comprises the steps of: 
 applying a photoresist coating of a thin film metal to said thick film tunable dielectric;    soft baking said thick film tunable dielectric;    exposing said thick film tunable dielectric;    post exposure baking said thick film tunable dielectric; and    developing said thick film tunable dielectric.    
   
   
       3 . The method of fabricating tunable dielectric chips of  claim 1 , wherein step (a) further comprises descumming said thick film tunable dielectric.  
   
   
       4 . The method of fabricating tunable dielectric chips of  claim 2 , wherein step (b), comprises the steps of: 
 baking said thick film tunable dielectric;    adhesion promoter coating said thick film tunable dielectric;    encapsulent coating said thick film tunable dielectric;    soft baking said thick film tunable dielectric;    exposing said thick film tunable dielectric;    pre-develop baking said thick film tunable dielectric; and    curing said thick film tunable dielectric.    
   
   
       5 . The method of fabricating tunable dielectric chips of  claim 4 , wherein step (b) further comprises the step of descumming said thick film tunable dielectric with the thin film metal and encapsulent coated thereon.  
   
   
       6 . The method of fabricating tunable dielectric chips of  claim 1 , further comprising the step of: 
 (c) metallizing at least one solder pad on said tunable dielectric chip.    
   
   
       7 . The method of fabricating tunable dielectric chips of  claim 6 , wherein step (c), comprises the steps of: 
 photoresist coating said thick film tunable dielectric;    soft baking said thick film tunable dielectric;    exposing said thick film tunable dielectric;    post exposure baking said thick film tunable dielectric;    developing said thick film tunable dielectric;    descumming said thick film tunable dielectric; and    metalizing at least one solder pad on said thick film tunable dielectric.    
   
   
       8 . The method of fabricating tunable dielectric chips of  claim 1 , further comprising depositing a thin titanium layer in between the metallization and a dielectric thick film to promote adhesion.  
   
   
       9 . The method of fabricating tunable dielectric chips of  claim 8 , wherein the thickness of said titanium layer is between 200 A to 500 A.  
   
   
       10 . A method, comprising: 
 fabricating a tunable dielectric chip by defining a critical area on a dielectric material via patterning and metallization; and    encapsulating said critical area.    
   
   
       11 . The method of  claim 10 , wherein encapsulating said critical area further comprises encapsulent coating said dielectric material with a thin film metal coating.  
   
   
       12 . The method of  claim 11 , further comprising: 
 applying a photoresist coating of a thin film metal to said dielectric material.    
   
   
       13 . The method of  claim 12 , further comprising: 
 soft baking said dielectric material with the thin film metal coated thereon.    
   
   
       14 . The method of  claim 13 , further comprising: 
 exposing said dielectric material;    post exposure baking said dielectric material; and    developing said dielectric material.    
   
   
       15 . The method of  claim 12 , further comprising: 
 descumming said dielectric material.    
   
   
       16 . The method of  claim 12 , further comprising surface cleaning, adhesion promoter coating and baking said dielectric material.  
   
   
       17 . The method of  claim 16 , further comprising soft baking and exposing said dielectric material.  
   
   
       18 . The method of  claim 17 , further comprising pre-develop baking and curing said dielectric material.  
   
   
       19 . The method of  claim 12 , further comprising descumming said dielectric material.  
   
   
       20 . The method of  claim 12 , further comprising: 
 acetone immersing said dielectric material; and    remover liftoff and final cleaning of said dielectric material;    
   
   
       21 . The method of  claim 11 , further comprising depositing a thin titanium layer in between the metallization dielectric material to promote adhesion.