Apparatus and method for electrochemically processing a microelectronic workpiece

Abstract

A reactor for use in electrochemical processing of a microelectronic workpiece is set forth and described herein. The apparatus comprises one or more walls defining a processing space therebetween for containing a processing fluid. The processing space includes at least a first fluid flow region and a second fluid flow region. A first electrode is disposed in the processing fluid of the first fluid flow region while a second electrode, comprising at least a portion of the microelectronic workpiece, is disposed in the processing fluid of the second fluid flow region. Fluid flow within the first fluid flow region is generally directed toward the first electrode and away from the second electrode while fluid flow within the second fluid flow region is generally directed toward the second electrode and away from the first electrode. Depending on the particular electrochemical process that is to be executed, the first e electrode may constitute either an anode or a cathode in the electrochemical processing of the microelectronic workpiece. The foregoing reactor architecture is particularly useful in connection with electroplating of the microelectronic workpiece and, more particularly, in electroplating operations that employ a consumable anode, such as a phosphorized copper anode.

1 - 52 . (canceled)  
   
   
       53 . A method for electrochemically processing a microelectronic workpiece comprising: 
 dividing a microelectronic workpiece processing space into a first fluid flow region and a second fluid flow region with an ion selective membrane;    providing a first processing fluid to the first fluid flow region through a first fluid flow entry and removing the first processing fluid through a first processing fluid exit, while a first electrode is in fluid communication with the first processing fluid in the first fluid flow region; and    providing a second processing fluid different than the first processing fluid to the second fluid flow region through a second fluid flow entry different than the first fluid flow entry, and removing the second processing fluid through a second processing fluid exit different than the first processing fluid exit, while a second electrode and at least a portion of the microelectronic workpiece are in fluid communication with the second processing fluid in the second fluid flow region.    
   
   
       54 . The method of  claim 53  wherein dividing a processing space includes dividing the processing space with a membrane that is selectively permeable to an ionic species in at least one of the first and second processing fluids.  
   
   
       55 . The method of  claim 53 , further comprising providing an anodic potential at the first electrode and a cathodic potential at the second electrode.  
   
   
       56 . The method of  claim 53 , further comprising applying a metallic material to the microelectronic workpiece via the first and second processing fluids.  
   
   
       57 . The method of  claim 53 , wherein providing a second processing fluid to the second fluid flow includes providing the second processing fluid from a fluid reservoir.  
   
   
       58 . The method of  claim 53  wherein dividing a processing space includes dividing the processing space with a membrane having an at least partially conical shape.  
   
   
       59 . The method of  claim 53  wherein dividing a processing space includes dividing the processing space with a membrane that inclines upwardly in a radially outward direction.  
   
   
       60 . The method of  claim 59 , further comprising directing gas bubbles radially outwardly against a surface of the membrane  
   
   
       61 . The method of  claim 53 , further comprising providing a perforated element between the membrane and the microelectronic workpiece.  
   
   
       62 . The method of  claim 53  wherein the workpiece processing space is in a vessel, and wherein the first electrode includes an anode, and wherein the method further comprises positioning the anode in the vessel.  
   
   
       63 . The method of  claim 53 , further comprising passing an ionic species through the membrane.  
   
   
       64 . The method of  claim 53 , further comprising passing only an ionic species through the membrane.  
   
   
       65 . The method of  claim 53 , further comprising preventing at least one of a particulates, a precipitate and gas bubbles from passing through the membrane.