Organic thin film transistor array panel and method of manufacturing the same

Abstract

An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.

1 . An organic thin film transistor array panel comprising: 
 a substrate;    a gate line extending in a first direction;    a data line extending in a second direction, intersecting with and insulated from the gate line;    a source electrode connected to the data line;    a drain electrode facing the source electrode;    a pixel electrode connected to the drain electrode; and    an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.    
     
     
         2 . The organic thin film transistor array panel of  claim 1 , wherein the organic material is a soluble organic material.  
     
     
         3 . The organic thin film transistor array panel of  claim 2 , wherein the organic material has a conjugated structure.  
     
     
         4 . The organic thin film transistor array panel of  claim 1 , wherein the organic material has a conjugated structure.  
     
     
         5 . The organic thin film transistor array panel of  claim 1 , wherein the organic material has an acid-labile group.  
     
     
         6 . The organic thin film transistor array panel of  claim 1 , wherein the organic material comprises a soluble pentacene derivative with an acid-labile group.  
     
     
         7 . The organic thin film transistor array panel of  claim 6 , wherein the acid-labile group is a t-butyloxycarbonyl group.  
     
     
         8 . The organic thin film transistor array panel of  claim 1 , further comprising an insulation pattern disposed on the organic semiconductor.  
     
     
         9 . The organic thin film transistor array panel of  claim 8 , wherein the insulation pattern comprises at least one of parylene, a fluoride-based hydrocarbon compound, and poly vinyl alcohol.  
     
     
         10 . The organic thin film transistor array panel of  claim 1 , wherein the source electrode, the drain electrode, and the pixel electrode are made of a same material.  
     
     
         11 . The organic thin film transistor array panel of  claim 1 , wherein the source electrode, the drain electrode, and the pixel electrode are formed in a same layer of the thin film transistor array panel.  
     
     
         12 . The organic thin film transistor array panel of  claim 1 , further comprising a contact pattern with conductivity disposed between the source electrode and the data line.  
     
     
         13 . The organic thin film transistor array panel of  claim 1 , further comprising a light-blocking member placed below the organic semiconductor.  
     
     
         14 . The organic thin film transistor array panel of  claim 1 , wherein the organic semiconductor is formed within a wave-shaped channel between the source electrode and the drain electrode.  
     
     
         15 . The organic thin film transistor array panel of  claim 1 , wherein the organic semiconductor is formed from a layer of organic material with a first resolution, and the layer is changed to the organic semiconductor with a second resolution higher than the first resolution after patterning by photolithography.  
     
     
         16 . A method of manufacturing an organic thin film transistor array panel, the method comprising: 
 forming a gate line on a substrate;    forming a gate insulating layer on the gate line;    forming a drain electrode and a data line with a source electrode on the gate insulating layer;    forming a layer of a photosensitive organic material on the data line and the drain electrode;    forming an organic semiconductor by selectively exposing the layer of photosensitive organic material to light;    forming an insulation pattern covering the organic semiconductor; and    forming a pixel electrode connected to the drain electrode.    
     
     
         17 . The method of  claim 16 , wherein the photosensitive organic material is a soluble material.  
     
     
         18 . The method of  claim 16 , wherein forming a layer of a photosensitive organic material is performed by a printing process, a spin coating process, or an ink-jet printing process.  
     
     
         19 . The method of  claim 16 , wherein forming an organic semiconductor is performed using hydrogen (H + ) as a catalyst.  
     
     
         20 . The method of  claim 16 , wherein the photosensitive organic material for the layer of a photosensitive organic material is obtained from a reaction of pentacene and t-butyloxycarbonyl.  
     
     
         21 . The method of  claim 16 , wherein, during forming an organic semiconductor, the photosensitive organic material layer undergoes a thermal-treatment after being exposed to light.  
     
     
         22 . The method of  claim 16 , wherein forming an insulation pattern is performed at a low temperature with a dry process.  
     
     
         23 . The method of  claim 16 , wherein forming an insulation pattern includes forming an insulating layer on the organic semiconductor and patterning the insulating layer by photolithography.  
     
     
         24 . A method of manufacturing an organic thin film transistor array panel, the method comprising: 
 forming a data line on a substrate;    forming an insulating layer on the data line;    forming a gate line on the insulating layer;    forming a gate insulating layer with a contact hole, partially exposing the data line, on the gate line and the insulating layer;    forming a source electrode, connected to the data line through the contact hole, and a pixel electrode with a drain electrode facing the source electrode, on the gate insulating layer;    forming a layer of a photosensitive organic material on the source electrode and the pixel electrode;    forming an organic semiconductor by selectively exposing the photosensitive organic material layer to light; and    forming an insulation pattern covering the organic semiconductor.    
     
     
         25 . The method of  claim 24 , wherein the photosensitive organic material is a soluble material.  
     
     
         26 . The method of  claim 24 , wherein forming a layer of a photosensitive organic material is performed by a printing process, a spin coating process, or an ink-jet printing process.  
     
     
         27 . The method of  claim 24 , wherein forming an organic semiconductor is performed using hydrogen (H + ) as a catalyst.  
     
     
         28 . The method of  claim 24 , wherein the photosensitive organic material for the layer of a photosensitive organic material is obtained from a reaction of pentacene and t-butyloxycarbonyl.  
     
     
         29 . The method of  claim 24 , wherein, during forming an organic semiconductor, the photosensitive organic material layer undergoes a thermal-treatment after being exposed to light.  
     
     
         30 . The method of  claim 24 , wherein forming an insulation pattern is performed at a low temperature with a dry process.  
     
     
         31 . The method of  claim 24 , wherein forming an insulation pattern includes forming an insulating layer on the organic semiconductor and patterning the insulating layer by photolithography.  
     
     
         32 . The method of  claim 24 , wherein forming a source electrode and a pixel electrode with a drain electrode comprises: 
 forming a layer of indium tin oxide at room temperature; and    patterning the layer of indium tin oxide by photolithography.    
     
     
         33 . The method of  claim 32 , wherein, during patterning the layer of indium tin oxide, the layer of indium tin oxide is etched using an etchant containing a basic material.  
     
     
         34 . A method of manufacturing an organic thin film transistor, the method comprising: 
 forming a layer of photosensitive organic material, having a first resolution, on a source electrode and a drain electrode; and,    forming an organic semiconductor having a second resolution, higher than the first resolution, after patterning the layer of organic material by photolithography.    
     
     
         35 . The method of  claim 34 , further comprising forming an insulating layer on the organic semiconductor and patterning the insulating layer by photolithography.