Antifuse having tantalum oxynitride film and method for making same

Abstract

A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film. Embodiments include a method of operating an antifuse, comprising applying a voltage across electrodes of a capacitor having a tantalum oxynitride film and forming a hole in the tantalum oxynitride film.

1 . A method of operating an antifuse, comprising: 
 applying a voltage across electrodes of a capacitor, the capacitor having an electrode containing tungsten nitride and having a tantalum oxynitride film; and    forming a hole in the tantalum oxynitride film to form a resistor.    
   
   
       2 . The method of  claim 1 , wherein the method further includes programming a redundant element in a memory.  
   
   
       3 . The method of  claim 1 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in an amorphous tantalum oxynitride film.  
   
   
       4 . The method of  claim 1 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in a crystalline tantalum oxynitride film.  
   
   
       5 . The method of  claim 1 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance between about 500 ohms and about 7000 ohms.  
   
   
       6 . The method of  claim 1 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance of about 3000 ohms.  
   
   
       7 . The method of  claim 1 , wherein applying a voltage across electrodes of a capacitor includes applying a voltage across an electrode having a shape selected from a group consisting of fin-type, stacked-type, container-type, crown-type and trenched-type.  
   
   
       8 . A method of operating an antifuse, comprising: 
 applying a voltage across electrodes of a capacitor, the capacitor having an electrode containing tungsten nitride and having a tantalum oxynitride film with a thin silicon film between the tantalum oxynitride film and the electrode containing the tungsten nitride; and    forming a hole in the tantalum oxynitride film to form a resistor.    
   
   
       9 . The method of  claim 8 , wherein the method further includes programming a redundant element in a memory.  
   
   
       10 . The method of  claim 8 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in an amorphous tantalum oxynitride film.  
   
   
       11 . The method of  claim 8 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in a crystalline tantalum oxynitride film.  
   
   
       12 . The method of  claim 8 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance between about 500 ohms and about 7000 ohms.  
   
   
       13 . The method of  claim 8 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance of about 3000 ohms.  
   
   
       14 . The method of  claim 8 , wherein applying a voltage across electrodes of a capacitor includes applying a voltage across an electrode having a shape selected from a group consisting of fin-type, stacked-type, container-type, crown-type and trenched-type.  
   
   
       15 . A method of operating an antifuse, comprising: 
 applying a voltage across electrodes of a capacitor, the capacitor having a tantalum oxynitride film and an electrode that includes a material selected from a group consisting of polysilicon, crystalline silicon, hemispherical grain polysilicon, germanium, silicon-germanium, ruthenium, ruthenium oxide, iridium, iridium oxide, platinum and rhenium; and    forming a hole in the tantalum oxynitride film to form a resistor.    
   
   
       16 . The method of  claim 15 , wherein the method further includes programming a redundant element in a memory.  
   
   
       17 . The method of  claim 15 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in an amorphous tantalum oxynitride film.  
   
   
       18 . The method of  claim 15 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in a crystalline tantalum oxynitride film.  
   
   
       19 . The method of  claim 15 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance between about 500 ohms and about 7000 ohms.  
   
   
       20 . The method of  claim 15 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance of about 3000 ohms.  
   
   
       21 . The method of  claim 15 , wherein applying a voltage across electrodes of a capacitor includes applying a voltage across an electrode having a shape selected from a group consisting of fin-type, stacked-type, container-type, crown-type and trenched-type.  
   
   
       22 . A method of operating an antifuse, comprising: 
 applying a voltage across electrodes of a capacitor, the capacitor having a tantalum oxynitride film with a thin silicon film between the tantalum oxynitride film and an electrode and having another electrode that includes a material selected from a group consisting of polysilicon, crystalline silicon, hemispherical grain polysilicon, germanium, silicon-germanium, ruthenium, ruthenium oxide, iridium, iridium oxide, platinum and rhenium; and    forming a hole in the tantalum oxynitride film to form a resistor.    
   
   
       23 . The method of  claim 22 , wherein the method further includes programming a redundant element in a memory.  
   
   
       24 . The method of  claim 22 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in an amorphous tantalum oxynitride film.  
   
   
       25 . The method of  claim 22 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in a crystalline tantalum oxynitride film.  
   
   
       26 . The method of  claim 22 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance between about 500 ohms and about 7000 ohms.  
   
   
       27 . The method of  claim 22 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance of about 3000 ohms.  
   
   
       28 . The method of  claim 22 , applying a voltage across electrodes of a capacitor includes applying a voltage across an electrode having a shape selected from a group consisting of fin-type, stacked-type, container-type, crown-type and trenched-type.  
   
   
       29 . A method of operating an antifuse, comprising: 
 applying a voltage across electrodes of a capacitor, the capacitor having a tantalum oxynitride film; and    forming a hole in the tantalum oxynitride film to form a resistor;    wherein a first electrode of the capacitor includes a material selected from a group consisting of polysilicon, crystalline silicon, hemispherical grain polysilicon, germanium, silicon-germanium, ruthenium, ruthenium oxide, iridium, iridium oxide, platinum and rhenium, and a second electrode of the capacitor includes tungsten nitride.    
   
   
       30 . The method of  claim 29 , wherein the method further includes programming a redundant element in a memory.  
   
   
       31 . The method of  claim 29 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in an amorphous tantalum oxynitride film.  
   
   
       32 . The method of  claim 29 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes forming a hole in a crystalline tantalum oxynitride film.  
   
   
       33 . The method of  claim 29 , wherein forming a hole in the tantalum oxynitride film to form a resistor includes creating a resistance between about 500 ohms and about 7000 ohms.  
   
   
       34 . The method of  claim 29 , wherein applying a voltage across electrodes of a capacitor includes applying the voltage across a capacitor formed over a supporting semiconductor structure.  
   
   
       35 . The method of  claim 29 , applying a voltage across electrodes of a capacitor includes applying the voltage across the first electrode having a shape selected from a group consisting of fin-type, stacked-type, container-type, crown-type and trenched-type.