Methods of etching photoresist on substrates

Abstract

Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including C x H y F z , where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

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       30 . A method of etching an organic photoresist on a substrate, comprising: 
 positioning a substrate in a plasma processing chamber of a plasma reactor, the substrate including an inorganic layer and an organic photoresist overlying the inorganic layer, the photoresist including a carbon-rich layer overlying bulk photoresist;    supplying a process gas to the plasma processing chamber;    generating a plasma from the process gas in the plasma processing chamber;    selectively etching the carbon-rich layer relative to the inorganic layer while optionally applying an external RF bias to the substrate;    after etching the carbon-rich layer, optionally removing the substrate from the plasma processing chamber and placing the substrate in an ashing chamber;    supplying an ashing gas containing oxygen to (i) the plasma processing chamber or (ii) the ashing chamber, in which the substrate is positioned;    generating a plasma from the ashing gas upstream from the substrate; and    etching the bulk photoresist.    
   
   
       31 . The method of  claim 30 , wherein the plasma reactor is an inductively coupled plasma reactor, and the substrate is capacitively RF biased.  
   
   
       32 . The method of  claim 30 , further comprising independently controlling ion flux and ion energy.  
   
   
       33 . The method of  claim 30 , wherein: 
 the plasma reactor is an inductively-coupled plasma reactor;    a planar antenna inductively couples RF energy into the plasma processing chamber through a dielectric member; and    the substrate is positioned in the plasma processing chamber facing the dielectric member.    
   
   
       34 . The method of  claim 30 , wherein the carbon-rich layer and the bulk photoresist are etched in the plasma processing chamber.  
   
   
       35 . The method of  claim 30 , wherein the carbon-rich layer is etched in the plasma processing chamber, and the bulk photoresist is etched in the ashing chamber.  
   
   
       36 . The method of  claim 30 , wherein the process gas comprises C x H y F z , where y≧x and z≧0, and at least one of (i) an oxygen-containing gas, and (ii) a hydrogen-containing gas different from the C x H y F z .