Encapsulated light receiving and processing semiconductor module with enhanced shielding and grounding properties

Abstract

A semiconductor module includes a resin package, a conductive film formed on the resin package, and a lead partially covered by the resin package. The lead includes an inner portion covered by the resin package, and an outer portion projecting from the resin package. A semiconductor element is mounted to the inner portion of the lead. The inner portion of the lead includes a plurality of extensions for grounding, and each of the extensions has a front end held in contact with the conductive film.

1 - 17 . (canceled)  
   
   
       18 . A light receiving semiconductor module comprising: 
 a first lead including a first die bonding portion, a second die bonding portion, and a wire bonding portion;    a photodiode mounted on the first die bonding portion of the first lead, the photodiode comprising an PN junction that includes a positive semiconductor layer and a negative semiconductor layer, the positive layer being provided with an anode pad, the negative layer being provided with a first cathode pad and a second cathode pad;    an integrated circuit element mounted on the second bonding portion of the first lead, the integrated circuit element being provided with a first connection pad, a second connection pad, a power supply pad and an output pad;    a second lead electrically connected to the power supply pad of the integrated circuit;    a third lead electrically connected to the output pad of the integrated circuit; and    a resin package enclosing the photodiode and the integrated circuit element together with part of the first to third leads;    wherein the anode pad of the photodiode is electrically connected to the wire bonding portion of the first lead via a wire, the first cathode pad of the photodiode is electrically connected to the first connection pad of the integrated circuit element via an additional wire, the second cathode pad of the photodiode is electrically connected to the second connection pad of the integrated circuit element via a further wire.    
   
   
       19 . The module according to  claim 18 , wherein the first die bonding portion of the first lead is formed with a recess for accommodating the photodiode, the recess being defined by a bottom portion to which the photodiode is mounted and a side wall surrounding the photodiode, the side wall being tapered toward the bottom portion.  
   
   
       20 . The module according to  claim 19 , wherein the recess has a depth which is no smaller than a thickness of the photodiode.  
   
   
       21 . The module according to  claim 19 , wherein the bottom portion and the side wall of the recess have substantially the same thickness.  
   
   
       22 . The module according to  claim 19 , wherein the side wall of the recess includes a reflective surface for reflecting light toward the photodiode.  
   
   
       23 . The module according to  claim 18 , further comprising a resin material covering the integrated circuit element, the resin material being covered by the resin package and having light shielding property which is higher than light shielding property of the resin package.  
   
   
       24 . The module according to  claim 18 , wherein the first lead further includes an outer portion projecting out of the resin package from a first surface of the resin package, and an inside extension extending toward a second surface of the resin package different from the first surface, the extension being held in contact with a conductive film covering the resin package.  
   
   
       25 . The module according to  claim 24  wherein the extension projects from the second surface of the resin package.  
   
   
       26 . The module according to  claim 24 , further comprising a connection strip provided on the first surface of the resin package and connected to the conductive film, the connection strip being held in contact with the first lead while surrounding the first lead.