Integrated circuit substrate material

Abstract

A semiconductor substrate material is disclosed for producing a semiconductor substrate. In an embodiment, the semiconductor substrate material may include a multitude of hollow microspheres. Each one of the multitude of hollow microspheres may have an inner layer and an outer layer. The inner layer may include a first material, the outer layer may include a second material, and the first material and the second material may differ from one another. The first material of the inner layer of each of the multitude of hollow microspheres may have a first melting point, the second material of the outer layer of the multitude of hollow microspheres may have a second melting point, and the first melting point may be higher than the second melting point.

1 . A semiconductor substrate material for producing a semiconductor substrate, the semiconductor substrate material comprising: 
 a multitude of hollow microspheres, each one of the multitude of hollow microspheres having an inner layer and an outer layer, the inner layer comprising a first material, the outer layer comprising a second material, and the first material and the second material differing from one another, wherein the first material of the inner layer of each of the multitude of hollow microspheres has a first melting point, wherein the second material of the outer layer of the multitude of hollow microspheres has a second melting point, and wherein the first melting point is higher than the second melting point.    
   
   
       2 . The semiconductor substrate material in accordance with  claim 1 , wherein the multitude of hollow microspheres comprises a multitude of gas filled glass microspheres, and wherein the second material of the outer layer comprises a glass material, the inner layer of each of the gas filled glass microspheres has the first melting point, the outer layer of the glass material has the second melting point, and the first melting point is higher than the second melting point.  
   
   
       3 . The semiconductor substrate material in accordance with  claim 2 , wherein at least one of the multitude of gas filled glass microspheres is sintered together with another one of the multitude of gas filled glass microspheres.  
   
   
       4 . The semiconductor substrate material in accordance with  claim 2 , wherein a hardened matrix contains the gas filled glass microspheres.  
   
   
       5 . The semiconductor substrate material in accordance with  claim 2 , further comprising a glaze is disposed on a top surface of the semiconductor substrate.  
   
   
       6 . The semiconductor substrate material in accordance with  claim 5 , wherein the glass material of the outer layer of at least one of the multitude of gas filled glass microspheres is sintered together with the glass material of the outer layer of another one of the multitude of gas filled glass microspheres.  
   
   
       7 . The semiconductor substrate material in accordance with  claim 2 , wherein the hardened matrix containing the multitude of hollow microspheres comprises glass particles, a binder material, and a viscosity modifier.  
   
   
       8 . The semiconductor substrate material in accordance with  claim 7 , wherein the binder material comprises at least one chosen from the group consisting of ethyl cellulose, an acrylic, a polyvinyl alcohol, an organic polymer, and a borophosphate glass.  
   
   
       9 . The semiconductor substrate material in accordance with  claim 7 , wherein the at least one viscosity modifier comprises at least one chosen from the group consisting of a surfactant, an organic thickener, a magnesium silicates thickening agent, and a filler material.  
   
   
       10 . The semiconductor substrate material in accordance with  claim 2 , wherein the semiconductor substrate forms a semiconductor wafer.  
   
   
       11 . The semiconductor substrate material in accordance with  claim 2 , wherein the semiconductor substrate forms an integrated circuit die.  
   
   
       12 . The semiconductor substrate material in accordance with  claim 1 , wherein the outer layer of at least one of the multitude of hollow microspheres is sintered together with the outer layer of another one of the multitude of hollow microspheres.  
   
   
       13 . The semiconductor substrate material in accordance with  claim 1 , wherein a hardened matrix contains the multitude of microspheres.  
   
   
       14 . The semiconductor substrate material in accordance with  claim 1 , further comprising a glaze is disposed on a top surface of the semiconductor substrate.  
   
   
       15 . The semiconductor substrate material in accordance with  claim 15 , wherein the outer layer of at least one of the multitude of hollow microspheres is sintered together with the outer layer of another one of the multitude of hollow microspheres.  
   
   
       16 . The semiconductor substrate material in accordance with  claim 1 , wherein the hardened matrix containing the multitude of hollow microspheres comprises glass particles, a binder material, and a viscosity modifier.  
   
   
       17 . The semiconductor substrate material in accordance with  claim 16 , wherein the binder material comprises at least one chosen from the group consisting of ethyl cellulose, an acrylic, a polyvinyl alcohol, an organic polymer, and a borophosphate glass.  
   
   
       18 . The semiconductor substrate material in accordance with  claim 16 , wherein the at least one viscosity modifier comprises at least one chosen from the group consisting of a surfactant, an organic thickener, a magnesium silicates thickening agent, and a filler material.  
   
   
       19 . The semiconductor substrate material in accordance with  claim 1 , wherein the semiconductor substrate forms a semiconductor wafer.  
   
   
       20 . The semiconductor substrate material in accordance with  claim 1 , wherein the semiconductor substrate forms an integrated circuit die.