Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

Abstract

A sputtering target and a process for producing a sputtering target from a silicon-based alloy with an aluminum content of more than 6 wt. % up to 50 wt. %. Preferably, the aluminum content of the alloy is at least 8 wt. %, but no more than 30 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

1 . A sputtering target produced by melting a silicon-based alloy with an Al content of greater than 6 wt. % up to 50 wt. %, and 
 vacuum-casting the alloy in a hollow cylindrical casting mold to produce tubular sections.    
   
   
       2 . The sputtering target according to  claim 1 , wherein the alloy has an Al content of at least 8 wt. %.  
   
   
       3 . The sputtering target according to  claim 1 , wherein the alloy has an Al content of at most 30 wt. %.  
   
   
       4 . The sputtering target according to  claim 2 , wherein the alloy has an Al content of at most 30 wt. %.  
   
   
       5 . A tubular cathode comprising a sputtering target produced by melting a silicon-based alloy with an Al content of greater than 6 wt. % up to 50 wt. %; and 
 vacuum-casting the alloy in a hollow cylindrical casting mold.    
   
   
       6 . The tubular cathode according to  claim 5 , wherein the alloy has an Al content of at least 8 wt. %.  
   
   
       7 . The tubular cathode according to  claim 5 , wherein the alloy has an Al content of at most 30 wt. %.  
   
   
       8 . The tubular cathode according to  claim 6 , wherein the alloy has an Al content of at most 30 wt. %.