US2006208353A1PendingUtilityA1
Semiconductor cooling system and process for manufacturing the same
Est. expiryAug 13, 2024(expired)· nominal 20-yr term from priority
H10W 40/28H10W 40/70H10W 40/00Y10S257/93
36
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A cooling device for an element such as a microprocessor in a computer, and a process for manufacturing the cooling device. The cooling device provides an effective structure of cooling a microprocessor by providing a metallic filler layer and a metal plate layer spreading out heat generated from the microprocessor, and thereby effectively thermally conducting heat away from the microprocessor. Further, a semiconductor thermoelectric module can be utilized to further cool the microprocessor.
Claims
exact text as granted — not AI-modified1 . A cooling device comprising:
an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to be in thermal conductive contact with a portion of said surface of said element outputting heat; a first metal plate in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; a second metallic filler layer in thermal conductive contact with said first metal plate; and a semiconductor thermoelectric module in thermal conductive contact with said second metallic filler layer.
2 . A cooling device according to claim 1 , further comprising:
a third metallic filler layer in thermal conductive contact with said semiconductor thermoelectric module; and a second metal plate in thermal conductive contact with said third metallic filler layer.
3 . A cooling device according to claim 2 , wherein said second and third metallic filler layers cover entire surfaces of said semiconductor thermoelectric module.
4 . A cooling device according to claim 1 , wherein said element to be cooled is an integrated circuit chip.
5 . A cooling device according to claim 2 , wherein said element to be cooled is an integrated circuit chip.
6 . A cooling device comprising:
an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to be in thermal conductive contact with a portion of said surface of said element outputting heat; a first metal plate in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%.
7 . A cooling device according to claim 2 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of:
Sn
21.1%,
Bi
50%,
Pb
20.5%, and
Cd
8.4%.
8 . A cooling device comprising:
an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to be in thermal conductive contact with a portion of said surface of said element outputting heat; a first metal plate in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%.
9 . A cooling device according to claim 2 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of:
Sn
12.5%,
Bi
50%,
Pb
25%, and
Cd
12.5%.
10 . A cooling device comprising:
an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to be in thermal conductive contact with a portion of said surface of said element outputting heat; a first metal plate in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%.
11 . A cooling device according to claim 2 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of:
Sn
12.9%,
Bi
49.4%,
Pb
27.7%, and
Cd
10%.
12 . A cooling device according to claim 1 , wherein said first metal plate is formed of at least one of aluminum or copper.
13 . A cooling device according to claim 2 , wherein at least one of said first and second metal plates is formed of at least one of aluminum or copper.
14 . A cooling device according to claim 2 , wherein said semiconductor thermoelectric module is a Peltier element.
15 . A cooling device according to claim 6 , wherein said element to be cooled is an integrated circuit chip.
16 . A cooling device according to claim 7 , wherein said element to be cooled is an integrated circuit chip.
17 . A cooling device according to claim 8 , wherein said element to be cooled is an integrated circuit chip.
18 . A cooling device according to claim 9 , wherein said element to be cooled is an integrated circuit chip.
19 . A cooling device according to claim 10 , wherein said element to be cooled is an integrated circuit chip.
20 . A cooling device according to claim 11 , wherein said element to be cooled is an integrated circuit chip.
21 . A process for manufacturing a cooling device comprising:
providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to be in thermal conductive contact with a portion of said surface of said element outputting heat; providing a first metal plate to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; providing a semiconductor thermoelectric module in thermal conductive contact with said second metallic filler layer.
22 . A process for manufacturing a cooling device according to claim 21 , further comprising:
providing a third metallic filler layer in thermal conductive contact with said semiconductor thermoelectric module; and providing a second metal plate in thermal conductive contact with said third metallic filler layer.
23 . A process for manufacturing a cooling device according to claim 22 , wherein said second and third metallic filler layers cover entire surfaces of said semiconductor thermoelectric module.
24 . A process for manufacturing a cooling device according to claim 21 , wherein said element to be cooled is an integrated circuit chip.
25 . A process for manufacturing a cooling device according to claim 22 , wherein said element to be cooled is an integrated circuit chip.
26 . A process for manufacturing a cooling device comprising:
providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to be in thermal conductive contact with a portion of said surface of said element outputting heat; providing a first metallic filler layer to be in thermal conductive contact with a portion of said surface of said element outputting heat; providing a first metal plate to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%.
27 . A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of
Sn
21.1%,
Bi
50%,
Pb
20.5%, and
Cd
8.4%.
28 . A process for manufacturing a cooling device comprising:
providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to be in thermal conductive contact with a portion of said surface of said element outputting heat; providing a first metal plate to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%.
29 . A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of
Sn
12.5%,
Bi
50%,
Pb
25%, and
Cd
12.5%.
30 . A process for manufacturing a cooling device comprising:
providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to be in thermal conductive contact with a portion of said surface of said element outputting heat; providing a first metal plate to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%.
31 . A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of
Sn
12.9%,
Bi
49.4%,
Pb
27.7%, and
Cd
10%.
32 . A process for manufacturing a cooling device according to claim 21 , wherein said first metal plate is formed of at least one of aluminum or copper.
33 . A process for manufacturing a cooling device according to claim 22 , wherein at least one of said first and second metal plates is formed of at least one of aluminum or copper.
34 . A process for manufacturing a cooling device according to claim 22 , wherein said semiconductor thermoelectric module is a Peltier element.
35 . A process for manufacturing a cooling device according to claim 26 , wherein said element to be cooled is an integrated circuit chip.
36 . A process for manufacturing a cooling device according to claim 27 , wherein said element to be cooled is an integrated circuit chip.
37 . A process for manufacturing a cooling device according to claim 28 , wherein said element to be cooled is an integrated circuit chip.
38 . A process for manufacturing a cooling device according to claim 29 , wherein said element to be cooled is an integrated circuit chip.
39 . A process for manufacturing a cooling device according to claim 30 , wherein said element to be cooled is an integrated circuit chip.
40 . A process for manufacturing a cooling device according to claim 31 , wherein said element to be cooled is an integrated circuit chip.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.