US2006210467A1PendingUtilityA1

Producing a stable catalyst for nanotube growth

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Individually held — no corporate assignee on recordPriority: Mar 17, 2005Filed: Mar 17, 2005Published: Sep 21, 2006
Est. expiryMar 17, 2025(expired)· nominal 20-yr term from priority
Inventors:Steven M. SmithBernard F. CollJaime QuinteroYi Wei
B82Y 30/00D01F 9/1272D01F 9/127
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PatentIndex Score
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Claims

Abstract

A process ( 40 ) is provided for preparing a catalyst ( 20 ). A catalyst ( 20 ) is formed over a substrate ( 12 ). A gas ( 24 ) comprising hydrogen and carbon is applied to the catalyst ( 20 ), wherein a carbon seeding layer ( 26 ) is formed on the catalyst ( 20 ). Carbon nanotubes ( 28 ) may then be grown from the catalyst ( 20 ) having the carbon seeding layer thereon ( 26 ).

Claims

exact text as granted — not AI-modified
1 . A method for preparing catalyst for carbon nanotube growth, comprising: 
 submitting the catalyst to a gas comprising hydrogen and carbon, including forming carbon seeding layer on the catalyst.    
     
     
         2 . The method of  claim 1  wherein the submitting step comprises applying methane.  
     
     
         3 . The method of  claim 1  wherein the submitting step comprises applying gas within a temperature range of 15° C. to 600° C.  
     
     
         4 . The method of  claim 1  wherein the submitting step comprises applying gas at a temperature of about 200° C.  
     
     
         5 . The method of  claim 1  wherein the forming step comprises forming the carbon seeding layer to a thickness of at least 5 nanometers.  
     
     
         6 . The method of  claim 1  wherein the forming step comprises forming the carbon seeding layer to a thickness of about 10 nanometers.  
     
     
         7 . The method of  claim 1  wherein the submitting step further includes reducing an oxide layer from the catalyst.  
     
     
         8 . A method for preparing a substrate for growing carbon nanotubes, comprising: 
 forming a catalyst over the substrate;    applying a gas comprising hydrogen and carbon to the catalyst, wherein a carbon seeding layer is formed on the catalyst;    growing the carbon nanotubes from the catalyst having the carbon seeding layer thereon.    
     
     
         9 . The method of  claim 8  wherein the applying step comprises applying methane.  
     
     
         10 . The method of  claim 8  wherein the applying step comprises applying gas within a temperature range of 15° C. to 600° C.  
     
     
         11 . The method of  claim 8  wherein the applying step comprises applying gas at a temperature of about 200° C.  
     
     
         12 . The method of  claim 8  wherein the forming step comprises forming the carbon seeding layer to a thickness of at least 5 nanometers.  
     
     
         13 . The method of  claim 8  wherein the forming step comprises forming the carbon seeding layer to a thickness of about 10 nanometers.  
     
     
         14 . The method of  claim 8  wherein the submitting step further includes reducing an oxide layer from the catalyst.  
     
     
         15 . A method for growing carbon nanotubes, comprising: 
 providing a substrate;    depositing a metal layer on the substrate;    forming a catalyst on the metal layer; and    applying a gas comprising hydrogen and carbon thereby forming a carbon seeding layer on the catalyst.    
     
     
         16 . The method of  claim 15  wherein the applying step comprises applying methane.  
     
     
         17 . The method of  claim 15  wherein the applying step comprises applying the gas is within a temperature range of 15° C. to 600° C.  
     
     
         18 . The method of  claim 15  wherein the applying step comprises applying the gas at a temperature of about 200° C.  
     
     
         19 . The method of  claim 15  wherein the forming step comprises forming the carbon seeding layer to a thickness of at least 5 nanometers.  
     
     
         20 . The method of  claim 15  wherein the forming a carbon seeding layer comprises forming the carbon seeding layer to a thickness of about 10 nanometers.  
     
     
         21 . The method of  claim 15  wherein the applying step further includes removing an oxide seeding layer from the catalyst.

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