Heatsink apparatus and thermally-conductive intermediate material for dissipating heat in semiconductor packages

Abstract

A semiconductor package comprising a die adjacent a lead frame die pad, said lead frame die pad adapted to dissipate heat from the die. The package further comprises a thermally-conductive material abutting the die and a heatsink abutting the thermally-conductive material, said heatsink facing a direction opposite from the lead frame die pad.

1 . A semiconductor package, comprising: 
 a die adjacent a lead frame die pad, said lead frame die pad adapted to dissipate heat from the die;    a thermally-conductive material abutting the die; and    a heatsink abutting the thermally-conductive material on an opposite side of said die from said lead frame die pad.    
   
   
       2 . The semiconductor package of  claim 1 , wherein the thermally-conductive material is a material selected from a group consisting of liquid attach, film attach, solder alloy, mold compound and interposer material.  
   
   
       3 . The semiconductor package of  claim 2 , wherein the interposer material is an adhesive, thermally-conductive tape.  
   
   
       4 . The semiconductor package of  claim 1 , wherein the heatsink is made of metal.  
   
   
       5 . The semiconductor package of  claim 1 , wherein the heatsink is made of thermally-conductive plastic.  
   
   
       6 . The semiconductor package of  claim 1 , wherein the lead frame die pad is adapted to dissipate heat from the die by transferring the heat to an adjacent circuit board.  
   
   
       7 . The semiconductor package of  claim 1 , wherein at least a portion of the package is encapsulated in a mold compound.  
   
   
       8 . The semiconductor package of  claim 1 , wherein the intermediate material reduces mechanical stress caused by multiple thermal expansion rates of the die.  
   
   
       9 . The semiconductor package of  claim 1 , further comprising a lead electrically coupled to the die, said lead adapted to transfer electrical signals between the die and a circuit board.  
   
   
       10 . The semiconductor package of  claim 1 , wherein the package is non-leaded.  
   
   
       11 . The semiconductor package of  claim 10 , wherein the package is selected from a group consisting of quad-flat no-lead packages and small-outline no-lead packages.  
   
   
       12 - 17 . (canceled)  
   
   
       18 . An apparatus, comprising: 
 a plurality of heatsinks, at least one of said heatsinks adapted to couple to a thermally-conductive material abutting a die on a semiconductor wafer; and    an aperture between at least some of the heatsinks, said aperture adapted to facilitate the deposition of a mold compound.    
   
   
       19 . The apparatus of  claim 18 , further comprising singulation lines.  
   
   
       20 . The apparatus of  claim 18 , wherein the aperture has a shape selected from a group consisting of a substantially rectangular shape and a cross shape.  
   
   
       21 . The apparatus of  claim 18 , wherein the thermally-conductive material reduces mechanical stress caused by varying thermal expansion rates of the die.