Semiconductor device and fabrication method therefor, capacitive element and fabrication method therefor, and MIS type semiconductor device and fabrication method therefor

Abstract

A semiconductor device includes an operating layer made of a semiconductor and a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.

1 . A semiconductor device comprising: 
 an operating layer made of a semiconductor; and    a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0-2 percent to 5 percent to an overall flow rate.    
   
   
       2 . The semiconductor device as claimed in  claim 1 , wherein a hydrogen content is at most 1 atomic percent in the silicon nitride film.  
   
   
       3 . The semiconductor device as claimed in  claim 1 , wherein the operating layer is made of any of silicon, silicon carbide, an In-based semiconductor, a GaAs-based semiconductor, and a GaN-based semiconductor.  
   
   
       4 . A capacitive element comprising: 
 a first metal layer;    a silicon nitride film formed on the first metal layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate; and    a second metal layer formed on the silicon nitride film.    
   
   
       5 . The capacitive element as claimed in  claim 4 , wherein a hydrogen content is at most 1 atomic percent in the silicon nitride film.  
   
   
       6 . The capacitive element as claimed in claim  4 , wherein the silicon nitride film has a thickness of 50 nm to 300 nm.  
   
   
       7 . A MIS type semiconductor device comprising: 
 an operating layer made of a semiconductor;    a gate insulating film made of a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate;    a gate electrode formed on the gate insulating film; and    a source electrode and a drain electrode formed on the operating layer to interpose the gate electrode therebetween.    
   
   
       8 . The MIS type semiconductor device as claimed in  claim 7 , wherein a hydrogen content is at most 1 atomic percent in the silicon nitride film.  
   
   
       9 . The MIS type semiconductor device as claimed in  claim 7 , wherein the operating layer is made of either silicon or silicon carbide.  
   
   
       10 . A fabrication method of a semiconductor device comprising: 
 forming an operating layer made of a semiconductor; and    forming an insulating film made of a silicon nitride film on the operating layer with a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, in a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.    
   
   
       11 . The fabrication method as claimed in claim  10 , wherein the step of forming the insulating film is a step of processing used for any of a passivation film, a gate insulating film, an a capacitive element.  
   
   
       12 . A fabrication method of a semiconductor device comprising: 
 forming a silicon nitride film on a layer to be selectively processed with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, in a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate;    forming a predetermined mask pattern on the silicon nitride film; and    selectively processing the layer with the predetermined mask pattern.    
   
   
       13 . The fabrication method as claimed in  claim 12 , wherein the step of forming the silicon nitride film is a step of forming the silicon nitride film under a condition that a growth temperature ranges 200° C. to 350° C.  
   
   
       14 . The fabrication method as claimed in  claim 12 , wherein the step of forming the silicon nitride film is a step of forming the silicon nitride film under a condition that a flow rate of the hydrogen gas is 0.4 percent to 4.5 percent to an overall flow rate.  
   
   
       15 . The fabrication method as claimed in  claim 12 , wherein the plasma CVD apparatus is any of a parallel plate type high frequency plasma apparatus, an electron cyclotron resonance plasma apparatus, and an inductive coupled type high-density plasma apparatus.