Hdp-cvd seasoning process for high power hdp-cvd gapfil to improve particle performance

Abstract

A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

1 - 11 . (canceled)  
   
   
       12 . A substrate processing system comprising: 
 a housing for forming a vacuum chamber having an interior surface;    a gas delivery system for introducing a seasoning gas into said vacuum chamber, wherein the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber;    a controller, operatively coupled to control said gas delivery system; and    a memory operatively coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:    a set of instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow the seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.    
   
   
       13 . The substrate processing system of  claim 12 , comprising an aluminum nitride top baffle, wherein the silicon oxide film is deposited on the baffle.  
   
   
       14 . The substrate processing system of  claim 12 , wherein the one or more aluminum nitride nozzles comprise a top nozzle and a side nozzle.  
   
   
       15 . The system of  claim 14 , wherein the silane gas component of the seasoning gas flows through the top nozzle and the side nozzle, and the oxygen component flows through the side nozzle.  
   
   
       16 . The system of  claim 15 , wherein the silane gas component flows through the top nozzle at a flow rate from about 1 sccm to about 20 sccm.  
   
   
       17 - 22 . (canceled)  
   
   
       23 . The substrate processing system of  claim 12 , wherein the seasoning gas further comprises a carrier gas selected from the group consisting of argon, helium and hydrogen.  
   
   
       24 . The substrate processing system of  claim 12 , wherein a silane component of the seasoning gas has a flow rate of about 175 sccm, and an oxygen component of the seasoning gas has a flow rate of about 350 sccm.  
   
   
       25 . A substrate processing system comprising: 
 a housing for forming a vacuum chamber having an interior surface;    a gas delivery system for introducing a seasoning gases into said vacuum chamber, wherein the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber;    a plasma generating system to generate a plasma from the seasoning gas;    a controller, operatively coupled to control said gas delivery system; and    a memory operatively coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:    a set of instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow the seasoning gases that have an oxygen to silane ratio greater than or equal to about 1.6:1 into the chamber and strike a plasma, wherein the plasma deposits a silicon oxide film on the aluminum nitride nozzles.    
   
   
       26 . The substrate processing system of  claim 25 , wherein the system further comprises a heating system to heat a substrate in the chamber to a temperature of about 700° C. or more during the formation of a deposited layer on the substrate.  
   
   
       27 . The system of  claim 26 , wherein the substrate comprises a wafer having a diameter of about 300 mm.  
   
   
       28 . The system of  claim 26 , wherein following the formation of the deposited layer over the substrate, said substrate is contaminated with about 200 particles or less from the deposited layer.  
   
   
       29 . The system of  claim 28 , wherein the substrate is contaminated with about 50 particles or less from the deposited layer.  
   
   
       30 . The system of  claim 26 , wherein the deposited layer comprises silicon oxide.  
   
   
       31 . The system of  claim 25 , wherein the plasma generating system generates a peak power of about 7000 Watts or more.  
   
   
       32 . The system of  claim 25 , wherein the one or more aluminum nitride nozzles have a peak operating temperature of about 320° C. or less.  
   
   
       33 . A substrate processing system comprising: 
 a housing for forming a vacuum chamber having an interior surface;    a gas delivery system for introducing an etchant gas and a seasoning gas into said vacuum chamber, wherein the seasoning gas has an oxygen to silane ratio greater than or equal to about 1.6:1, and wherein the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber;    a plasma generating system to generate a plasma from the seasoning gas;    a controller, operatively coupled to control said gas delivery system; and    a memory operatively coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:    a set of instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow the etchant gas into the chamber to clean the interior of the chamber, and then form a plasma from the seasoning gas that deposits a silicon oxide film on the aluminum nitride nozzles.    
   
   
       34 . The system of  claim 33 , wherein the etchant gas is nitrogen trifluoride.