Structure of a structure release and a method for manufacturing the same

Abstract

A structure of a structure release and a manufacturing method are provided. The structure and manufacturing method are adapted for an interference display cell. The structure of the interference display cell includes a first electrode, a second electrode and at least one supporter. The second electrode has at least one hole and is arranged about parallel with the first electrode. The supporter is located between the first electrode and the second electrode and a cavity is formed. In the release etch process of manufacturing the structure, an etchant can pass through the hole to etch a sacrificial layer between the first and the second electrodes to form the cavity; therefore, the time needed for the process becomes shorter.

1 . A device suitable for an optical interference display cell structure, the device comprising: 
 a first electrode;    a second electrode including at least one hole, wherein the second electrode is arranged about parallel with the first electrode; and    a supporter located between the first electrode and the second electrode, wherein a cavity is formed between the supporter, the first electrode and the second electrode,    wherein when a structure release etching process is used to remove a sacrificial layer between the first electrode and the second electrode to form the cavity, an etchant passes through the hole to etch the sacrificial layer, so as to reduce the time needed in the structure release etching process.    
   
   
       2 . The device according to  claim 1 , wherein a diameter of the hole is between about 1 micrometer and 10 micrometers.  
   
   
       3 . The device according to  claim 1 , wherein a diameter of the hole is between about 1 micrometer and 5 micrometers.  
   
   
       4 . The device according to  claim 1 , wherein the structure release etching process comprises a remote plasma etching process.  
   
   
       5 . The device according to  claim 4 , wherein a precursor of a remote plasma formed in the remote plasma etching process comprises an etching reagent, and the etching reagent comprises at least one of a fluorine base and a chlorine base.  
   
   
       6 . The device release according to  claim 4 , wherein a precursor of a remote plasma formed in the remote plasma etching process comprises at least one of CF 4 , BCl 3 , NF 3 , and SF 6 .  
   
   
       7 . The device according to  claim 1 , wherein the etchant includes an etching reagent, and the etching reagent comprises at least one of a fluorine base and a chlorine base.  
   
   
       8 . The device according to  claim 1 , wherein the etchant comprises at least one of CF 4 , BCl 3 , NF 3 , and SF 6 .  
   
   
       9 . The device according to  claim 1 , wherein a material of the sacrificial layer comprises at least one of a dielectric material, metal material and silicon material.  
   
   
       10 . The device according to  claim 1 , wherein the second electrode comprises a deformable electrode.  
   
   
       11 . A method for manufacturing an optical interference display device disposed on a substrate, the method comprising: 
 forming a first electrode on the substrate;    forming a sacrificial layer on the first electrode;    forming at least two openings in the sacrificial layer and the first electrode to define a position of the optical interference display device;    forming a supporter in each of the openings;    forming a second electrode on the sacrificial layer and the supporter in each of the openings, wherein the second electrode includes at least one hole, and the hole exposes the sacrificial layer; and    removing the sacrificial layer by a remote plasma etching process.    
   
   
       12 . The method according to  claim 11 , wherein the second electrode comprises a deformable electrode.  
   
   
       13 . The method according to  claim 11 , wherein a diameter of the hole is between about 1 micrometer and 10 micrometers.  
   
   
       14 . The method according to  claim 11 , wherein a diameter of the hole is between about 1 micrometer and 5 micrometers.  
   
   
       15 . The method for according to  claim 11 , wherein a precursor of a remote plasma formed in the remote plasma etching process comprises an etching reagent, and the etching reagent comprises at least one of a fluorine base and a chlorine base.  
   
   
       16 . The method for according to  claim 11 , wherein a precursor of a remote plasma formed in the remote plasma etching process comprises at least one of CF 4 , BCl 3 , NF 3 , and SF 6 .  
   
   
       17 . The method according to  claim 11 , wherein a material of the sacrificial layer comprises at least one of a dielectric material, metal material and silicon material.