Method for depositing metallic nitride series thin film

Abstract

The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.

1 - 38 . (canceled)  
   
   
       39 . A gas processing apparatus for processing an object with a gas, said apparatus comprising: 
 a process vessel for containing therein said object;    an exhaust system for exhausting an atmosphere in said process vessel;    a gas supply source for supplying said gas;    a gas flow line connected between said process vessel and said gas supply source;    a mass flow controller provided in said gas flow line;    a first on-off valve provided in said gas flow line between said gas supply source and said mass flow controller;    a second on-off valve provided in said gas flow line between said mass flow controller and said process vessel; and    a pre-flow line connected to said gas flow line between said mass flow controller and said second on-off valve, for exhausting said gas without introducing same into said process vessel; and    a third on-off valve provided in said pre-flow line.    
   
   
       40 . The apparatus as set forth in  claim 39 , wherein a shower head is provided in a top of said process vessel for discharging said gas supplied through said gas flow line into said process vessel.  
   
   
       41 . The apparatus as set forth in  claim 39 , wherein said exhaust system includes an exhaust line connected to a bottom of said process vessel.  
   
   
       42 . The apparatus as set forth in  claim 41 , wherein a downstream-end of said pre-flow line is connected to said exhaust line.  
   
   
       43 . The apparatus as set forth in  claim 39 , wherein said object is a substrate and said gas is a material gas for depositing a thin film on said substrate.  
   
   
       44 . A cluster tool type process system comprising: 
 a cassette vessel for housing a plurality of objects;    a plurality of gas processing units for processing an object with a gas; and    a transfer vessel connected to said cassette vessel and said gas processing units, said transfer vessel being provided with a transfer arm therein,    at least one of said gas processing units comprising:    a process vessel for containing therein said object;    an exhaust system for exhausting an atmosphere in said process vessel;    a gas supply source for supplying said gas;    a gas flow line connected between said process vessel and said gas supply source;    a mass flow controller provided in said gas flow line;    a first on-off valve provided in said gas flow line between said gas supply source and said mass flow controller;    a second on-off valve provided in said gas flow line between said mass flow controller and said process vessel;    a pre-flow line connected to said gas flow line between said mass flow controller and said second on-off valve, for exhausting said gas without introducing same into said process vessel; and    a third on-off valve provided in said pre-flow line.    
   
   
       45 . The system as set forth in  claim 44 , wherein said at least one of said gas processing units is a deposition unit for depositing a thin film on a substrate as said object with a material gas.  
   
   
       46 . The system as set forth in  claim 45 , further comprising a pre-cleaning unit connected to said transfer vessel.  
   
   
       47 . The system as set forth in  claim 46 , wherein said pre-cleaning unit is arranged for a pre-cleaning of said substrate utilizing an inductively coupled plasma or a remote plasma.  
   
   
       48 . The system as set forth in  claim 45 , further comprising a degassing vessel connected to said transfer vessel.  
   
   
       49 . The system as set forth in  claim 45 , further comprising a cooling vessel connected to said transfer vessel.  
   
   
       50 . A method for processing an object with a gas, said method comprising the steps of: 
 arranging said object in a process vessel;    evacuating said process vessel; and    introducing said gas into said process vessel through a gas flow line provided with a mass flow controller to process said object with said gas,    said method further comprising, between said evacuating step and said introducing step, the step of pre-flowing said gas through a pre-flow line connected to said gas flow line between said mass flow controller and said process vessel to exhaust said gas, without introducing said gas into said process vessel.    
   
   
       51 . The method as set forth in  claim 50 , wherein said object is a substrate and said gas is a material gas for depositing a thin film on said substrate.