US2006237729A1PendingUtilityA1
Light emission from semiconductor integrated circuits
Est. expiryDec 28, 2020(expired)· nominal 20-yr term from priority
Inventors:Robert W. Bower
H10H 20/00H10N 99/00
48
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Abstract
Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination.
Claims
exact text as granted — not AI-modified1 . A multilayer light emitting device, comprising:
an electron emitting layer; an insulating layer over the electron emitting layer; and a light emitting layer over the insulating layer; wherein electrons emitted from the electron emitting layer pass through the insulating layer and into the light emitting layer and are converted into bandgap radiation by the light emitting layer.
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