Etching method and etching device

Abstract

An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L 1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L 1 , a diluting liquid L 2 for the etchant liquid L 1 is discharged at a thin portion of the film for processing.

1 . An etching device, comprising: 
 a spin chuck to hold and rotate a wafer;    a liquid-discharging nozzle to discharge etchant liquid at a predetermined position on the wafer held by said spin chuck; and    a diluting liquid-discharging nozzle to discharge diluting liquid for said etchant liquid on the outer side of the position where said etchant liquid is discharged on the wafer held by said spin chuck.    
   
   
       2 . The etching device according to  claim 1 , wherein said diluting liquid-discharging nozzle has a plurality of discharge apertures to discharge said diluting liquid at a plurality of positions in the radial direction on the wafer held by said spin chuck.  
   
   
       3 . The etching device according to  claim 1 , wherein said diluting liquid-discharging nozzle moves the position where said diluting liquid is discharged in the radial direction on the wafer held by said spin chuck.  
   
   
       4 . The etching device according to  claim 1 , wherein said liquid-discharging nozzle has a plurality of discharge apertures to discharge said etchant liquid at a plurality of positions in the radial direction on the wafer held by said spin chuck.  
   
   
       5 . The etching device according to  claim 1 , wherein said liquid-discharging nozzle moves the position where said etchant liquid is discharged in the radial direction on the wafer held by said spin chuck.  
   
   
       6 . The etching device according to  claim 1 , wherein a gas supply nozzle is provided on the outer side from the position where said etchant liquid is discharged on the wafer held by said spin chuck, to spray inert gas toward the outer periphery.