Manufacturing method of solid-state image sensing device

Abstract

In a method of manufacturing a camera module having a CMOS image sensor, a semiconductor chip to serve as a light sensor is mounted on a optical-component-mounting face of a wiring substrate mother board and, after bonding wires are connected to the semiconductor chip, a lens barrel is joined to the wiring substrate mother board so as to cover the semiconductor chip. A position adjustment pin and a through hole are provided on the lens barrel and the wiring substrate mother board respectively outside a junction face between the lens barrel and the wiring substrate mother board to be used for adjusting the position of the lens barrel with respect to the wiring substrate mother board by inserting the position adjustment pin into the through hole.

1 . A method of manufacturing a solid-state image sensing device comprising the steps of: 
 (a) preparing a wiring substrate mother board having a first face and a second face on the side opposite to said first face;    (b) mounting first electronic components over said first face of said wiring substrate mother board;    (c) encapsulating said first electronic components by using an encapsulation body;    (d) mounting second electronic components including image sensors over said second face of said wiring substrate mother board; and    (e) joining a frame to said second face of said wiring substrate mother board so as to cover said second electronic components,    wherein said frame has a position adjustment pin for adjusting the position of said frame with respect to said wiring substrate mother board,    wherein said wiring substrate mother board has a through hole into which said position adjustment pin is to be inserted, and    wherein in said step (c), said encapsulation body is formed in such a way that said through hole is avoided.    
   
   
       2 . A method of manufacturing a solid-state image sensing device according to  claim 1 , 
 wherein said wiring substrate mother board has a plurality of module regions, and said step (c) is a step of forming said encapsulation body as a batch encapsulation body for encapsulating said first electronic components in said module regions in the aggregate.    
   
   
       3 . A method of manufacturing a solid-state image sensing device according to  claim 2 , wherein a plurality of said batch encapsulation bodies is formed over said first face of said wiring substrate parent substrate with said batch encapsulation bodies being separated from each other.  
   
   
       4 . A method of manufacturing a solid-state image sensing device according to  claim 3 , wherein a depression is formed in a portion of each of said batch encapsulation bodies.  
   
   
       5 . A method of manufacturing a solid-state image sensing device according to  claim 2 , wherein in said step (c), said module regions are divided into a plurality of groups and a plurality of said first electronic components in each of said groups is encapsulated in the aggregate.  
   
   
       6 . A method of manufacturing a solid-state image sensing device according to  claim 5 , wherein in said step (c), an encapsulation material is supplied to any particular one of said groups through an encapsulation-material-supplying path provided for said particular one of said groups so as to form said encapsulated body for said particular one of said groups in the aggregate.